UCC27444
- Typical 4-A peak source and sink drive current for each channel
- INA and INB input pins capable of handling –5 V
- Absolute maximum VDD voltage 20 V
- Wide VDD operating range from 4.5 V to 18 V
- Two independent gate drive channels
- Independent enable function for each output
- Fast propagation delays (18-ns typical)
- Fast rise and fall times (11-ns and 7-ns typical)
- 1-ns typical delay matching between the two channels
- SOIC8 and VSSOP8 PowerPAD™ package options
- Operating junction temperature range of –40°C to 125°C
The UCC27444 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444-Q1 has a typical peak drive strength of 4 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The devices fast propagation delay (18-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.
The UCC27444 can handle –5 V at its INx inputs, which improves robustness in systems with moderate ground bouncing. The inputs can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The devices transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.
The UCC27444 also features low voltage operation and power on reset (POR) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | UCC27444 20-V, 4-A Dual-Channel Low-Side Gate Driver with –5-V Input Capability datasheet | PDF | HTML | 2023/07/20 |
Application note | Why use a Gate Drive Transformer? | PDF | HTML | 2024/03/04 | |
Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024/01/22 | |
Application note | Static Magnet Power Supply Design for Magnetic Resonance Imaging Application | PDF | HTML | 2024/01/22 | |
Application note | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021/11/10 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
Application note | Improving Efficiency of DC-DC Conversion through Layout | 2019/05/07 | ||
Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019/01/18 | ||
Application brief | High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) | 2018/11/26 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
UCC27423-4-5-Q1EVM — UCC2742xQ1 활성화를 지원하는 듀얼 4A 고속 저압측 MOSFET 드라이버 평가 모듈(EVM)
PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®
TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
HVSSOP (DGN) | 8 | Ultra Librarian |
SOIC (D) | 8 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.