홈 전원 관리 게이트 드라이버 저압측 드라이버
홈
전원 관리
게이트 드라이버
저압측 드라이버

UCC27512-EP

활성

SON 패키지에 5V UVLO를 지원하는 EP(Enhanced Product) 4A/8A 싱글 채널 게이트 드라이버

지금 주문
데이터 시트

UCC27512-EP

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -55 to 125 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating HiRel Enhanced Product Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -55 to 125 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating HiRel Enhanced Product Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
WSON (DRS) 6 9 mm² 3 x 3
  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability
  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
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4개 모두 보기
유형 직함 날짜
* Data sheet Single Channel High-Speed, Low-Side Gate Driver (With 4-A/8-A Peak Source/Sink). datasheet 2013/06/10
* Radiation & reliability report UCC27512MDRSTEP Reliability Report 2016/02/09
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/02/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/02/28

설계 및 개발

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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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