TLC272

現行

雙路、16-V、2-MHz、輸入至 V- 運算放大器

立即訂購

產品規格表

document-pdfAcrobat LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E) (英文)

勘誤表

document-pdfAcrobat
Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics (英文)

現在提供此產品的更新版本

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TLV9102

現行

雙路、16V、1.1MHz、低功耗運算放大器 Pin-to-pin upgrade with improved performance: lower Vos(1.5mV), higher slew rate(4.5V/us) and output current(80mA)

TLC272

現行

產品規格表

立即訂購

產品詳細資料

Number of channels

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

Rail-to-rail

In to V-

GBW (typ) (MHz)

Slew rate (typ) (V/µs)

3.6

Vos (offset voltage at 25°C) (max) (mV)

Iq per channel (typ) (mA)

0.7

Vn at 1 kHz (typ) (nV√Hz)

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.8

Input bias current (max) (pA)

CMRR (typ) (dB)

Iout (typ) (A)

0.01

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.3

Input common mode headroom (to positive supply) (typ) (V)

-0.8

Output swing headroom (to negative supply) (typ) (V)

0.03

Output swing headroom (to positive supply) (typ) (V)

-1.2

Number of channels

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

Rail-to-rail

In to V-

GBW (typ) (MHz)

Slew rate (typ) (V/µs)

3.6

Vos (offset voltage at 25°C) (max) (mV)

Iq per channel (typ) (mA)

0.7

Vn at 1 kHz (typ) (nV√Hz)

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.8

Input bias current (max) (pA)

CMRR (typ) (dB)

Iout (typ) (A)

0.01

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.3

Input common mode headroom (to positive supply) (typ) (V)

-0.8

Output swing headroom (to negative supply) (typ) (V)

0.03

Output swing headroom (to positive supply) (typ) (V)

-1.2

PDIP (P)

92.5083 mm² 9.81 x 9.43

SOIC (D)

29.4 mm² 4.9 x 6

SOP (PS)

48.36 mm² 6.2 x 7.8

TSSOP (PW)

19.2 mm² 3 x 6.4

Trimmed Offset Voltage:
TLC277 . . . 500 uV Max at 25°C, V_DD = 5 V
Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range:
       0°C to 70°C ...3 V to 16 V
       –40°C to 85°C ...4 V to 16 V
       –55°C to 125°C ...4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
Low Noise ...Typically 25 nV/Hz at f = 1 kHz
Output Voltage Range Includes Negative Rail
High Input impedance ...10¹² Typ
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

Trimmed Offset Voltage:
TLC277 . . . 500 uV Max at 25°C, V_DD = 5 V
Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range:
       0°C to 70°C ...3 V to 16 V
       –40°C to 85°C ...4 V to 16 V
       –55°C to 125°C ...4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
Low Noise ...Typically 25 nV/Hz at f = 1 kHz
Output Voltage Range Includes Negative Rail
High Input impedance ...10¹² Typ
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

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	類型	標題	日期
*	Data sheet	LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E)	2002年 2月 25日
*	Errata	Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics	2011年 4月 13日
	E-book	The Signal e-book: A compendium of blog posts on op amp design topics	2017年 3月 28日
	Application note	TLC272 and TLC277 EMI Immunity Performance	2013年 12月 31日

設計與開發

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開發板

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放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件，可測試通用運算放大器 (op amp) 參數，並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項，可滿足封裝需求，使工程師能夠快速評估和驗證裝置性能。

AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝，包括：

D (SOIC-8 和 SOIC-14)
PW (TSSOP-14)
DGK (VSSOP-8)
DBV (SOT23-5 和 SOT23-6)
DCK (SC70-5 和 SC70-6)

使用指南: PDF | HTML

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使用指南: PDF

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開發板

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使用指南: PDF

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模擬型號

TLC272, TLC272A, TLC272B PSpice Model

SLOJ092.ZIP (3 KB) - PSpice Model

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計算工具

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設計工具

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模擬工具

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使用指南: PDF

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Test report: PDF

電路圖: PDF

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電路圖: PDF

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Test report: PDF

電路圖: PDF

參考設計

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Test report: PDF

電路圖: PDF

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電路圖: PDF

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電路圖: PDF

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