TLC272

現行

雙路、16-V、2-MHz、輸入至 V- 運算放大器

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open-in-new 比較替代產品
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可直接投入的替代產品,相較於所比較的裝置,具備升級功能
TLV9102 現行 雙路、16V、1.1MHz、低功耗運算放大器 Pin-to-pin upgrade with improved performance: lower Vos(1.5mV), higher slew rate(4.5V/us) and output current(80mA)

產品詳細資料

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6 SOP (PS) 8 48.36 mm² 6.2 x 7.8 TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • Trimmed Offset Voltage:
           TLC277 . . . 500 uV Max at 25°C, VDD = 5 V
  • Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
           0°C to 70°C ...3 V to 16 V
           –40°C to 85°C ...4 V to 16 V
           –55°C to 125°C ...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
  • Low Noise ...Typically 25 nV/Hz at f = 1 kHz
  • Output Voltage Range Includes Negative Rail
  • High Input impedance ...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

  • Trimmed Offset Voltage:
           TLC277 . . . 500 uV Max at 25°C, VDD = 5 V
  • Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
           0°C to 70°C ...3 V to 16 V
           –40°C to 85°C ...4 V to 16 V
           –55°C to 125°C ...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
  • Low Noise ...Typically 25 nV/Hz at f = 1 kHz
  • Output Voltage Range Includes Negative Rail
  • High Input impedance ...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

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技術文件

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檢視所有 4
類型 標題 日期
* Data sheet LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E) 2002年 2月 25日
* Errata Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics 2011年 4月 13日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日
Application note TLC272 and TLC277 EMI Immunity Performance 2013年 12月 31日

設計與開發

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使用指南: PDF
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模擬型號

TLC272, TLC272A, TLC272B PSpice Model

SLOJ092.ZIP (3 KB) - PSpice Model
計算工具

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設計工具

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設計工具

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參考設計

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電路圖: PDF
參考設計

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
PDIP (P) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian
SOP (PS) 8 Ultra Librarian
TSSOP (PW) 8 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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