TPS51116
- Synchronous Buck Controller (VDDQ)
- Wide-Input Voltage Range: 3.0-V to 28-V
- D−CAP™ Mode with 100-ns Load Step Response
- Current Mode Option Supports Ceramic Output Capacitors
- Supports Soft-Off in S4/S5 States
- Current Sensing from RDS(on) or Resistor
- 2.5-V (DDR), 1.8-V (DDR2), Adjustable to
1.5-V (DDR3), 1.35-V (DDR3L), 1.2-V (LPDDR3 and DDR4) or
Output Range 0.75-V to 3.0-V - Equipped with Powergood, Overvoltage Protection and Undervoltage Protection
- 3-A LDO (VTT), Buffered Reference (VREF)
- Capable to Sink and Source 3 A
- LDO Input Available to Optimize Power Losses
- Requires only 20-µF Ceramic Output Capacitor
- Buffered Low Noise 10-mA VREF Output
- Accuracy ±20 mV for both VREF and VTT
- Supports High-Z in S3 and Soft-Off in S4/S5
- Thermal Shutdown
The TPS51116 provides a complete power supply for DDR/SSTL-2, DDR2/SSTL-18, DDR3/SSTL-15, DDR3L, LPDDR3 and DDR4 memory systems. It integrates a synchronous buck controller with a 3-A sink/source tracking linear regulator and buffered low noise reference. The device offers the lowest total solution cost in systems where space is at a premium. The synchronous controller runs fixed 400-kHz, pseudo-constant frequency PWM with an adaptive on-time control that can be configured in D-CAP™ Mode for ease of use and fastest transient response or in current mode to support ceramic output capacitors. The 3-A sink/source LDO maintains fast transient response only requiring 20-µF (2 × 10 µF) of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The device supports all of the sleep state controls placing VTT at high-Z in S3 (suspend to RAM) and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5 (suspend to disk). The device has all of the protection features including thermal shutdown and is offered in both a 20-pin HTSSOP PowerPAD™ package and 24-pin 4 × 4 QFN.
技術文件
設計與開發
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TPS51116EVM-001 — TPS51116 記憶體功率解決方案,同步降壓控制器評估模組
The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to (...)
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HTSSOP (PWP) | 20 | Ultra Librarian |
VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。