TPS737-Q1
- Qualified for automotive applications
- AEC-Q100 qualified with the following results:
- Device temperature grade 1: –40°C to 125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4A
- Stable with 1-µF or larger ceramic output capacitor
- Input voltage range: 2.2 V to 5.5 V
- Ultra-low dropout voltage: 130 mV (typical) at 1 A
- Excellent load transient response, even with only 1-µF output capacitor
- NMOS topology delivers low reverse leakage current
- 1% initial accuracy
- 3% overall accuracy over line, load, and temperature
- Less than 20-nA (typical) quiescent current in shutdown mode
- Thermal shutdown and current limit for fault protection
- Available in multiple output voltage versions
The TPS737xx-Q1 family of linear low-dropout (LDO) voltage regulators uses an NMOS pass element in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1-µF ceramic output capacitor. The NMOS topology also allows very low dropout.
The TPS737xx-Q1 family uses an advanced BiCMOS process to yield high precision while delivering very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20 nA and ideal for portable applications. These devices are protected by thermal shutdown and foldback current limit.
技術文件
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檢視所有 3 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | TPS737-Q1 1-A Low-Dropout Regulator With Reverse Current Protection datasheet (Rev. B) | 2019年 9月 27日 | |
| Application note | LDO Noise Demystified (Rev. B) | PDF | HTML | 2020年 8月 18日 | |
| Application note | LDO PSRR Measurement Simplified (Rev. A) | PDF | HTML | 2017年 8月 9日 |
設計與開發
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參考設計
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The cascade development kit has two main use cases:
- To use the MMWCAS-DSP-EVM as a capture card to fully evaluate the AWR2243 four-chip cascade performance by using the mmWave studio tool, please read the TIDEP-01012 design guide.
- To use the MMWCAS-DSP-EVM to develop radar real time SW application, (...)
參考設計
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參考設計
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TIDA-01512 uses the TPS53681 multiphase controller and CSD95490Q5MC Smart Power Stages to implement a high-performance design suitable for powering NXP QorIQ Communications Processors.
The dual outputs of the controller target the 60-ATDC, 1.0-V core rail with a four-phase design and a 30-ATDC, (...)
參考設計
TIDM-TM4C129POEAUDIO — 支援乙太網路供電 (PoE) 的音頻通訊參考設計
This design uses Texas Instrument's high performance TM4C129x microcontrollers (MCUs) with integrated Ethernet PHY to capture, exchange and playback audio efficiently with power supplied over the network (PoE solution) instead of separate external power sources. The application uses TivaWare (...)
參考設計
TIDM-TM4C129POE — 適用於物聯網連線的 TM4C129POE 乙太網路供電 (PoE) 參考設計
This design integrates Texas Instruments PoE solutions with TM4C129x high performance microcontrollers to enable customers to develop applications for IoT in a small form factor board. Ability to derive power over existing network cable with intelligence to gather, process and exchange data with (...)
參考設計
TIDM-TM4CFLASHSRAM — 適用於在高效能 MCU 上下載和執行程式碼的平行並聯 XIP 快閃記憶體和 SRAM 設計
This reference design demonstrates how to implement and interface Asynchronous Parallel Flash and SRAM Memories to the performance microcontroller TM4C129. The implementation is made possible by using the EPI Interface in Host Bus 16 Mode with mutliple Chip Selects to interface a 1Gbit-8Mbit range (...)
參考設計
TIDM-TM4C129XS2E — 高效能 MCU 的 RTOS 架構可配置序列轉乙太網路轉換器參考設計
Legacy products may only contain a serial port. Accessing such end equipments (EEs) is increasingly becoming a challenge due to the inability to add them to a shared network and access them over long distances (like remote control stations). A Serial-to-Ethernet (S2E) converter provides a (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VSON (DRB) | 8 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
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