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線性與低壓差 (LDO) 穩壓器

TPS7H1210-SEP

現行

採用航太級強化塑膠封裝的耐輻射、-3-V 至 -16.5-V 輸入、1-A、負極線性穩壓器

立即訂購
產品規格表

TPS7H1210-SEP

現行
產品規格表 立即訂購

產品詳細資料

Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Rating Space Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 PSRR at 100 KHz (dB) 61 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Rating Space Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 PSRR at 100 KHz (dB) 61 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
VQFN (RGW) 20 25 mm² 5 x 5
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.
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類型 標題 日期
* Data sheet TPS7H1210-SEP –16.5-V, 1-A, Negative Linear Regulator in Space Enhanced Plastic datasheet PDF | HTML 2021年 11月 23日
* VID TPS7H1210-SEP VID V62-21616 2022年 1月 4日
* Radiation & reliability report TPS7H1210-SEP Single-Event Effects (SEE) Test Report 2021年 12月 13日
* Radiation & reliability report TPS7H1210-SEP Neutron Displacement Damage (NDD) Characterization 2021年 11月 24日
* Radiation & reliability report TPS7H1210-SEP Total Ionizing Dose (TID) 2021年 11月 24日
* Radiation & reliability report TPS7H1210-SEP Production Flow and Reliability Report PDF | HTML 2021年 11月 8日
Selection guide TI Space Products (Rev. J) 2024年 2月 12日
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 2024年 1月 11日
White paper Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML 2022年 12月 14日
White paper Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML 2022年 12月 13日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
User guide TPS7H1210EVM User's Guide PDF | HTML 2021年 11月 22日
Certificate TPS7H1210EVM EU RoHS Declaration of Conformity (DoC) 2021年 10月 4日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H1210EVM — 適用於 -3-V 至 -16.5-V 輸入、1-A、負線性穩壓器的 TPS7H1210-SEP 評估模組

TPS7H1210 評估模組 (EVM) 是用於評估 TPS7H1210-SEP 航太級強化型低壓差 (LDO) 負電壓線性穩壓器的工程展示板。

使用指南: PDF | HTML
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模擬型號

TPS7H1210-SEP PSpice Transient Model

SBVM985.ZIP (23 KB) - PSpice Model
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參考設計

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGW) 20 Ultra Librarian
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