UC1825-SP

現行

耐輻射 QMLV、30-V 輸入、1.5-A 雙端 1-MHz PWM 控制器

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UC1825B-SP 現行 抗輻射 QMLV、30V、2A 雙端 1MHz PWM 控制器 Improved TID performance (100 krad) with increased max frequency (1 MHz) and dual outputs for half/full-bridge, or push-pull topologies.

產品詳細資料

Vin (max) (V) 20 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Forward, Full bridge, Half bridge, Push pull Rating Space Features Error amplifier, Multi-topology, Soft start, Synchronization pin Duty cycle (max) (%) 80
Vin (max) (V) 20 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Forward, Full bridge, Half bridge, Push pull Rating Space Features Error amplifier, Multi-topology, Soft start, Synchronization pin Duty cycle (max) (%) 80
CDIP (J) 16 135.3552 mm² 19.56 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • QML-V Qualified, SMD 5962-87681
  • Rad-Tolerant: 30 kRad (Si) TID(1)
  • Compatible With Voltage- or Current-Mode Topologies
  • Practical Operation Switching Frequencies to 1 MHz
  • 50-ns Propagation Delay-to-Output
  • High-Current Dual Totem Pole Outputs (1.5 A Peak)
  • Wide Bandwidth Error Amplifier
  • Fully Latched Logic With Double-Pulse Suppression
  • Pulse-by-Pulse Current Limiting
  • Soft Start/Maximum Duty-Cycle Control
  • Undervoltage Lockout With Hysteresis
  • Low Start-Up Current (1.1 mA)

(1) Radiation tolerance is a typical value based upon initial device qualification with dose rate = 10 mrad/sec. Radiation Lot Acceptance Testing is available - contact factory for details.

  • QML-V Qualified, SMD 5962-87681
  • Rad-Tolerant: 30 kRad (Si) TID(1)
  • Compatible With Voltage- or Current-Mode Topologies
  • Practical Operation Switching Frequencies to 1 MHz
  • 50-ns Propagation Delay-to-Output
  • High-Current Dual Totem Pole Outputs (1.5 A Peak)
  • Wide Bandwidth Error Amplifier
  • Fully Latched Logic With Double-Pulse Suppression
  • Pulse-by-Pulse Current Limiting
  • Soft Start/Maximum Duty-Cycle Control
  • Undervoltage Lockout With Hysteresis
  • Low Start-Up Current (1.1 mA)

(1) Radiation tolerance is a typical value based upon initial device qualification with dose rate = 10 mrad/sec. Radiation Lot Acceptance Testing is available - contact factory for details.

The UC1825 PWM control device is optimized for high-frequency switched mode power supply applications. Particular care was given to minimizing propagation delays through the comparators and logic circuitry while maximizing bandwidth and slew rate of the error amplifier. This controller is designed for use in either current-mode or voltage mode systems with the capability for input voltage feed-forward.

Protection circuitry includes a current limit comparator with a 1-V threshold, a TTL compatible shutdown port, and a soft start pin which will double as a maximum duty-cycle clamp. The logic is fully latched to provide jitter-free operation and prohibit multiple pulses at an output. An undervoltage lockout section with 800 mV of hysteresis assures low start up current. During undervoltage lockout, the outputs are high impedance.

This device features totem pole outputs designed to source and sink high peak currents from capacitive loads, such as the gate of a power MOSFET. The on state is designed as a high level.

The UC1825 PWM control device is optimized for high-frequency switched mode power supply applications. Particular care was given to minimizing propagation delays through the comparators and logic circuitry while maximizing bandwidth and slew rate of the error amplifier. This controller is designed for use in either current-mode or voltage mode systems with the capability for input voltage feed-forward.

Protection circuitry includes a current limit comparator with a 1-V threshold, a TTL compatible shutdown port, and a soft start pin which will double as a maximum duty-cycle clamp. The logic is fully latched to provide jitter-free operation and prohibit multiple pulses at an output. An undervoltage lockout section with 800 mV of hysteresis assures low start up current. During undervoltage lockout, the outputs are high impedance.

This device features totem pole outputs designed to source and sink high peak currents from capacitive loads, such as the gate of a power MOSFET. The on state is designed as a high level.

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技術文件

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類型 標題 日期
* Data sheet High-Speed PWM Controller. datasheet (Rev. A) 2012年 3月 22日
* SMD UC1825-SP SMD 5962-87681 2016年 7月 8日
* Radiation & reliability report UC1825-SP Radiation Test Report (5962-8768104VEA) 2015年 5月 8日
Selection guide TI Space Products (Rev. J) 2024年 2月 12日
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023年 8月 31日
Application note QML flow, its importance, and obtaining lot information (Rev. C) 2023年 8月 30日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022年 11月 17日
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022年 10月 19日
Application brief Controlling Input Power for Present and Next-Generation Power Controllers PDF | HTML 2020年 12月 14日
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020年 8月 21日
Application note Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form PDF | HTML 2020年 5月 18日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

模擬型號

UC1825 TINA-TI Transient Reference Design

SLUM653.TSC (5219 KB) - TINA-TI Reference Design
模擬型號

UC1825 Unencrypted TINA-TI Transient Spice Model

SLUM673.ZIP (6 KB) - TINA-TI Spice Model
參考設計

PMP22680 — 具有磁回饋的 40-W、±15-V 返馳參考設計

此參考設計從 70-V 至 120-V DC 輸入電壓產生 40 W 的隔離 ±15 V。此設計使用磁回饋電路來取代光耦合器的功能。
Test report: PDF
參考設計

PMP23033 — 具磁回饋的 40-W 5-V 單開關順向轉換器參考設計

本參考設計可產生從 60-V 至 120-V DC 輸入電壓的 40-W 的隔離 5-V 電壓。此設計使用磁回饋電路來取代光耦合器的功能。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
CDIP (J) 16 Ultra Librarian
LCCC (FK) 20 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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