UCC28C56H-Q1

現行

車用 30-V、低功耗電流模式 PWM 控制器、用於 SiC 的 18.8-V/15.5-V UVLO、100% 工作週期

產品詳細資料

Vin (min) (V) 15 Vin (max) (V) 30 Iout (max) (A) 1 Operating temperature range (°C) -40 to 150 Control mode Current Topology Boost, Buck, Flyback, Forward, SEPIC Rating Automotive Vout (min) (V) 0 Vout (max) (V) 80 Features Adjustable switching frequency, Current limiting, Dead time control, Error amplifier, Fixed frequency, Multi-topology, Programmable max duty cycle Iq (typ) (µA) 1300 Duty cycle (max) (%) 100 Number of phases 1 TI functional safety category Functional Safety-Capable
Vin (min) (V) 15 Vin (max) (V) 30 Iout (max) (A) 1 Operating temperature range (°C) -40 to 150 Control mode Current Topology Boost, Buck, Flyback, Forward, SEPIC Rating Automotive Vout (min) (V) 0 Vout (max) (V) 80 Features Adjustable switching frequency, Current limiting, Dead time control, Error amplifier, Fixed frequency, Multi-topology, Programmable max duty cycle Iq (typ) (µA) 1300 Duty cycle (max) (%) 100 Number of phases 1 TI functional safety category Functional Safety-Capable
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Undervoltage lockout options to support both Si and SiC MOSFET applications
  • 30-V VDD absolute maximum voltage

  • 1-MHz maximum Fixed frequency oeration
  • 50-µA startup current, 75-µA maximum
  • Low operating current : 1.3 mA at fOSC = 52 kHz
  • High operating TJ : 150℃ maximum
  • Fast 35-ns cycle-by-cycle over-current limiting
  • ±1-A peak driving current
  • Rail-to-rail output:
    • 25-ns rise time
    • 20-ns fall time
  • ±1% accurate 2.5-V error amplifier reference
  • Pin-to-pin compatible and drop-in replacement for UCC28C4x-Q1

  • Functional Safety-Capable
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: -40°C to 125°C
    • Device HBM classification level 2: ±2 kV
    • Device CDM classification level C4B: 750 V
  • Undervoltage lockout options to support both Si and SiC MOSFET applications
  • 30-V VDD absolute maximum voltage

  • 1-MHz maximum Fixed frequency oeration
  • 50-µA startup current, 75-µA maximum
  • Low operating current : 1.3 mA at fOSC = 52 kHz
  • High operating TJ : 150℃ maximum
  • Fast 35-ns cycle-by-cycle over-current limiting
  • ±1-A peak driving current
  • Rail-to-rail output:
    • 25-ns rise time
    • 20-ns fall time
  • ±1% accurate 2.5-V error amplifier reference
  • Pin-to-pin compatible and drop-in replacement for UCC28C4x-Q1

  • Functional Safety-Capable
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: -40°C to 125°C
    • Device HBM classification level 2: ±2 kV
    • Device CDM classification level C4B: 750 V

The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and SiC MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4x-Q1.

The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56-59-Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50-55-Q1).

VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also allowing for the exclusion of an external LDO.

The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and SiC MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4x-Q1.

The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56-59-Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50-55-Q1).

VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also allowing for the exclusion of an external LDO.

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UCC28C56H 現行 工業用 30-V、低功耗電流模式 PWM 控制器、用於 SiC 的 18.8-V/15.5-V UVLO、100% 工作週期 Industrial grade version of product.
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UCC28C57H-Q1 現行 車用 30-V、低功耗電流模式 PWM 控制器、用於 SiC 的 18.8-V/15.5-V UVLO、50% 工作週期 Equivalent product with lower duty cycle.

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類型 標題 日期
* Data sheet UCC28C5x-Q1 Automotive Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs datasheet (Rev. C) PDF | HTML 2023年 3月 14日
White paper Isolated Bias Power Supply Architecture for HEV and EV Traction Inverters PDF | HTML 2023年 10月 11日
User guide Using the UCC28C56EVM-066 (Rev. C) PDF | HTML 2022年 12月 7日
Application note High Density Auxiliary Power Supply Using a SiC MOSFET for 800-V Traction Invert PDF | HTML 2022年 7月 6日

設計與開發

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開發板

UCC28C56EVM-066 — 適用於一次側控制 (使用 AUX 線圈) 返馳穩壓器的 UCC28C56H-Q1 評估模組

UCC28C56EVM-066 是高效率的一次側控制 (使用 AUX 線圈) 返馳輔助電源供應,適用於 EV 和 HEV 汽車動力傳動系統。該設計爲 800-V 電池系統提供 15.2-VTYP、40-W 輸出。在 125 V 到 1000 V 的輸入電壓範圍內可提供 40 W。確切的輸出電壓視負載而定。從 40-V 至 125-V 輸入,該設計將提供 20 W。EVM 採用 1700-V 碳化矽 (SiC) MOSFET,是 800-V 電池系統的理想選擇。

使用指南: PDF | HTML
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模擬型號

UCC28C56H and UCC28C56H-Q1 PSpice Model

SLUM835.ZIP (5 KB) - PSpice Model
模擬型號

UCC28C56H-Q1 PSpice With Additional Component-level Models

SLUM844.ZIP (60 KB) - PSpice Model
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian

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  • 鉛塗層/球物料
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  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
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