LMG2100R044
- Integrated 4.4mΩ half-bridge GaN FETs and driver
- 90V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- High slew rate switching with low ringing
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Gate driver capable of up to 10MHz switching
- Excellent propagation delay (33ns typical) and matching (2ns typical)
- Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
- Supply rail undervoltage for lockout protection
- Low power consumption
- Exposed top QFN package for top-side cooling
- Large GND pad for bottom-side cooling
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | LMG2100R044 100V, 35A GaN Half-Bridge Power Stage datasheet (Rev. B) | PDF | HTML | 15 Mar 2024 |
Technical article | GaN 可推動電子設計轉型的 4 種中電壓應用 | PDF | HTML | 20 Feb 2024 | |
Technical article | GaN이 전자 설계를 혁신하는 4가지 중전압 애플리케이션 | PDF | HTML | 20 Feb 2024 | |
Technical article | Four mid-voltage applications where GaN will transform electronic designs | PDF | HTML | 17 Feb 2024 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
LMG2100EVM-078 — LMG2100 evaluation module
TIDA-010933 — 1.6kW, bidirectional micro inverter based on GaN reference design
PMP23340C2K — 48V to 12V GaN-enabled 1.1kW 1/8 brick power module reference design using C2000™ MCU
PMP23340UCD — 48V to 12V GaN-enabled 1.1kW 1/8 brick reference design using digital power isolated controller
TIDA-010042 — 400-W GaN-based MPPT charge controller and power optimizer reference design
TIDA-010936 — 48V/16A small form factor three-phase GaN inverter reference design for integrated motor drives
Accurate phase-current sensing (...)
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
WQFN-FCRLF (RAR) | 16 | Ultra Librarian |
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