Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von UCC28C53
- Undervoltage lockout options to support both Si and SiC MOSFET applications
- 30-V VDD absolute maximum voltage
- 1-MHz maximum fixed frequency operation
- 50-µA startup current, 75-µA maximum
- Low operating current: 1.3 mA (at f OSC = 52 kHz)
- Fast 35-ns, cycle-by-cycle overcurrent limiting
- ±1-A peak driving current
- Rail-to-rail output
- 25-ns rise time
- 20-ns fall time
- ±1% accurate 2.5-V error amplifier reference
- Pin-to-pin compatible and drop-in replacement for UCCx8C4x
- Functional Safety-Capable
- Documentation available to aid functional safety system design
Beschreibung von UCC28C53
The UCCx8C5x family of devices are high-performance current-mode PWM controllers that can drive both Si and SiC MOSFETs in various applications. The UCCx8C5x family is a more efficient and robust version of the UCCx8C4x.
The UCCx8C5x family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56-59), in addition to existing UVLO thresholds for continued Si MOSFET support (UCCx8C50-55).
VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-V gs, 18-V gs, or 15-V gs SiC MOSFETs, while also allowing for the exclusion of an external LDO.
The UCCx8C5x family is offered in 8-pin VSSOP (DGK), and 8-pin SOIC (D) packages.