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Drivers para motores de CC sin escobillas (BLDC)
Controladores BLDC

DRV8353M

ACTIVO

Controlador de puerta trifásico inteligente de 102 V máx. con amplificadores de derivación de corrie

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DRV8353M

ACTIVO
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Detalles del producto

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -55 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -55 to 125
WQFN (RTA) 40 36 mm² 6 x 6
  • 9 to 100-V, Triple half-bridge gate driver

    • Extended TA operation -55 °C to 125 °C

    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver

    • Extended TA operation -55 °C to 125 °C

    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
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Documentación técnica

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* Data sheet DRV8353M 100-V Three-Phase Smart Gate Driver datasheet PDF | HTML 31 mar 2020

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

DRV8353RH-EVM — Módulo de evaluación DRV8353RH para controlador de puerta inteligente CC sin escobillas y trifásico

The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

Guía del usuario: PDF
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Placa de evaluación

DRV8353RS-EVM — Módulo de evaluación DRV8353RS para controlador de puerta inteligente CC sin escobillas y trifásico

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

Guía del usuario: PDF
No disponible en TI.com
Herramienta de cálculo

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Productos y hardware compatibles

Productos y hardware compatibles

Productos
Controladores BLDC
DRV8320 — Controlador de puerta inteligente trifásico de 65 V máx. DRV8320R — Controlador de puerta inteligente trifásico de 65 V máx. con regulador de reductor DRV8323 — Controlador de puerta trifásico inteligente de 65 V máx. con amplificadores de derivación de corr DRV8323R — Controlador de puerta inteligente trifásico de 65 V máx. con regulador reductor y amplificadores de DRV8329 — Controlador de puerta trifásico de 60 V con amplificador de detección de corrient DRV8329-Q1 — Controlador de puerta trifásico de 60 V con amplificador de detección de corriente único para la ind DRV8334 — Controlador de puerta trifásico de 60 V y 1,000 mA a 2,000 mA con detección precisa de corriente DRV8340-Q1 — Controlador de puerta inteligente trifásico con batería de 12 V a 24 V para automoción DRV8343-Q1 — Controlador de puerta trifásico con batería de 12 V a 24 V para automoción con amplificadores de DRV8350 — Controlador de puerta inteligente trifásico de 102 V máx. DRV8350F — Controlador de puerta inteligente gestionado por calidad, seguridad funcional, trifásico, 102 V máx. DRV8350R — Controlador de puerta inteligente trifásico de 102 V máx. con regulador de reductor DRV8353 — Controlador de puerta trifásico inteligente de 102 V máx. con amplificadores de derivación de corrie DRV8353F — Controlador de puerta inteligente gestionado por calidad, seguridad funcional, trifásico, 102 V máx. DRV8353M — Controlador de puerta trifásico inteligente de 102 V máx. con amplificadores de derivación de corrie DRV8353R — Controlador de puerta inteligente trifásico de 102 V máx. con regulador reductor y amplificadores de
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
WQFN (RTA) 40 Ultra Librarian
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

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