LMG3650R070
- 650V 70mΩ GaN power FET with integrated gate driver
- >200V/ns FET hold-off
- Adjustable slew rates for optimization of switching performance and EMI mitigation
- 10V/ns to 100V/ns turn-on slew rates
- 10V/ns to full speed turn-off slew rates
- Operates with supply pin and input logic pin voltage range from 9V to 26V
- Robust Protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- 9.8mm × 11.6mm TOLL package witht thermal pad
The LMG365xR070 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R070 provides a 5V LDO output on LDO5V pin that can be used to power external digital isolator. The LMG3656R070 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R070 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.
기술 자료
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
TO-OTHER (KLA) | 9 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치