전원 관리 Power stages 질화 갈륨(GaN) 전력계

LMG3650R070

미리 보기

통합 드라이버 및 보호를 지원하는 650V 70mΩ TOLL 패키지 GaN FET

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제품 상세 정보

VDS (max) (V) 650 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Over Current Protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 175
VDS (max) (V) 650 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Over Current Protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 175
TO-OTHER (KLA) 9 115.632 mm² 9.9 x 11.68
  • 650V 70mΩ GaN power FET with integrated gate driver
    • >200V/ns FET hold-off
    • Adjustable slew rates for optimization of switching performance and EMI mitigation
      • 10V/ns to 100V/ns turn-on slew rates
      • 10V/ns to full speed turn-off slew rates
    • Operates with supply pin and input logic pin voltage range from 9V to 26V
  • Robust Protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • 9.8mm × 11.6mm TOLL package witht thermal pad
  • 650V 70mΩ GaN power FET with integrated gate driver
    • >200V/ns FET hold-off
    • Adjustable slew rates for optimization of switching performance and EMI mitigation
      • 10V/ns to 100V/ns turn-on slew rates
      • 10V/ns to full speed turn-off slew rates
    • Operates with supply pin and input logic pin voltage range from 9V to 26V
  • Robust Protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • 9.8mm × 11.6mm TOLL package witht thermal pad

The LMG365xR070 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R070 provides a 5V LDO output on LDO5V pin that can be used to power external digital isolator. The LMG3656R070 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R070 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.

The LMG365xR070 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R070 provides a 5V LDO output on LDO5V pin that can be used to power external digital isolator. The LMG3656R070 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R070 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.

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* Data sheet LMG365xR070 650V 70 mΩ GaN FET With Integrated Driver and Protection datasheet PDF | HTML 2025/01/15
EVM User's guide LMG3650R070 Evaluation Module PDF | HTML 2025/01/17

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포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
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  • 조립 위치

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