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TPS54116-Q1

現行

具 4-A、2-MHz VDDQ DC/DC 轉換器、1-A VTT LDO 和 VTTREF 的車用 DDR 電源解決方案

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TPS54116-Q1

現行
產品規格表 立即訂購

產品詳細資料

Product type DDR Vin (min) (V) 2.95 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Complete Solution, Power good, Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.65 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4
Product type DDR Vin (min) (V) 2.95 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Complete Solution, Power good, Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.65 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4
WQFN (RTW) 24 16 mm² 4 x 4
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
  • 4-A Synchronous Buck Converter
    • Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
    • Fixed Frequency Current-mode Control
    • Adjustable Frequency from 100 kHz to 2.5 MHz
    • Synchronizable to an External Clock
    • 0.6-V ±1% Voltage Reference Over Temperature
    • Adjustable Cycle-by-Cycle Peak Current Limit
    • Monotonic Start-up Into Pre-biased Outputs
  • 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
    • Stable with 2 × 10-µF MLCC Capacitor
    • 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
  • Independent Enable Pins with Adjustable UVLO and Hysteresis
  • Thermal Shutdown
  • –40°C to 150°C Operating TJ
  • 24-pin, 4-mm × 4-mm WQFN Package
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
  • 4-A Synchronous Buck Converter
    • Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
    • Fixed Frequency Current-mode Control
    • Adjustable Frequency from 100 kHz to 2.5 MHz
    • Synchronizable to an External Clock
    • 0.6-V ±1% Voltage Reference Over Temperature
    • Adjustable Cycle-by-Cycle Peak Current Limit
    • Monotonic Start-up Into Pre-biased Outputs
  • 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
    • Stable with 2 × 10-µF MLCC Capacitor
    • 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
  • Independent Enable Pins with Adjustable UVLO and Hysteresis
  • Thermal Shutdown
  • –40°C to 150°C Operating TJ
  • 24-pin, 4-mm × 4-mm WQFN Package

The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.

The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.

The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.

Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.

Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.

The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.

The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.

The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.

Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.

Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
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技術文件

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重要文件 類型 標題 格式選項 日期
* Data sheet TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator datasheet (Rev. B) PDF | HTML 2016年 10月 17日
User guide Single LP8733-Q1 User's Guide to Power DRA78x and TDA3 (Rev. A) PDF | HTML 2021年 3月 31日
Application note DDR VTT Power Solutions: A Competitive Analysis (Rev. A) 2020年 7月 9日
Technical article Improving DDR Memory Performance in Automotive Applications PDF | HTML 2017年 6月 22日
Technical article Four design tips to obtain 2MHz switching frequency PDF | HTML 2016年 10月 3日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS54116-Q1EVM-830 — TPS54116-Q1 車用 DDR 電源解決方案評估模組

此評估模組旨在展示採用 TPS54116-Q1 穩壓器設計時，可實現的精簡印刷電路板面積。外部分壓器實現可調整的輸出電壓。TPS54116-Q1 DC/DC 轉換器是一款同步降壓轉換器，旨在提供最高 4A 的輸出，以及用於 DDR 記憶體終端的整合式 1A 源極/汲極 LDO。

使用指南: PDF
TI.com 無法提供
模擬型號

TPS54116-Q1 PSpice Transient Model

SLVMBR1.ZIP (219 KB) - PSpice Model
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參考設計

TIDA-00530 — 適用於低功耗 TDA3x 系統的車用電源參考設計

This solution was designed to make an integrated, size-optimized power design for ADAS applications using the TDA3x SoC off of an automotive battery input.  By targeting only applications with lower processing needs, we’re able to choose devices and components which are smaller, compared (...)
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
WQFN (RTW) 24 Ultra Librarian
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