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UCC21738-Q1

現行

適用於 SiC/IGBT、主動短路防護的車用 10-A 單通道隔離閘極驅動器

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產品規格表

UCC21738-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active Miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active Miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C

The UCC21738-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10-A peak source and sink currents.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common-mode transient immunity (CMTI).

The UCC21738-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21738-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10-A peak source and sink currents.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common-mode transient immunity (CMTI).

The UCC21738-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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重要文件 類型 標題 格式選項 日期
* Data sheet UCC21738-Q1 Automotive 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet PDF | HTML 2023年 9月 8日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AA) 2026年 3月 10日
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024年 7月 19日

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開發板

UCC21732QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

UCC21732QDWEVM-025 是一款精巧的單通道絕緣式閘極驅動器電路板，可為採用 150 x 62 x 17mm 和 106 x 62 x 30mm 封裝的 SiC MOSFET 和 Si IGBT 電源模組提供所需的驅動、偏壓電壓、保護和診斷功能。此 TI EVM 是以 SOIC-16DW 封裝，沿面距離與電氣間隙為 8.0mm 的 5.7 kVrms 強化型隔離驅動器 UCC217XX 為基礎。EVM 包括 SN6505B 架構的隔離式 DC-DC 變壓器偏壓電源供應器。

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