TPS51216-EP

AKTIV

Verbessertes Produkt – kompletter Synchron-Abwärtswandler für Speicherlösungen (DDR2, DDR3 und DDR3L

Produktdetails

Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.7 Vout (max) (V) 1.8 Features Shutdown Pin for S3 Iq (typ) (mA) 0.6 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.7 Vout (max) (V) 1.8 Features Shutdown Pin for S3 Iq (typ) (mA) 0.6 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
WQFN (RUK) 20 9 mm² 3 x 3
  • Synchronous buck controller (VDDQ)
    • Conversion voltage range: 3 to 28 V
    • Output voltage range: 0.7 to 1.8 V
    • 0.8% VREF accuracy
    • D-CAP™ mode for fast transient response
    • Selectable 300-kHz/400-kHz switching frequencies
    • Optimized efficiency at light and heavy loads with auto-skip function
    • Supports soft-off in S4/S5 states
    • OCL/OVP/UVP/UVLO protections
    • Powergood output
  • 2-A LDO (VTT), buffered reference (VTTREF)
    • 2-A (peak) sink and source current
    • Requires only 10-µF of ceramic output capacitance
    • Buffered, low noise, 10-mA VTTREF output
    • 0.8% VTTREF, 20-mV VTT accuracy
    • Support high-z in S3 and soft-off in S4/S5
  • Thermal shutdown
  • 20-Pin, 3 mm × 3 mm, WQFN Package
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled baseline
    • One assembly/test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range (1)
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability

(1)Additional temperature ranges available - contact factory

  • Synchronous buck controller (VDDQ)
    • Conversion voltage range: 3 to 28 V
    • Output voltage range: 0.7 to 1.8 V
    • 0.8% VREF accuracy
    • D-CAP™ mode for fast transient response
    • Selectable 300-kHz/400-kHz switching frequencies
    • Optimized efficiency at light and heavy loads with auto-skip function
    • Supports soft-off in S4/S5 states
    • OCL/OVP/UVP/UVLO protections
    • Powergood output
  • 2-A LDO (VTT), buffered reference (VTTREF)
    • 2-A (peak) sink and source current
    • Requires only 10-µF of ceramic output capacitance
    • Buffered, low noise, 10-mA VTTREF output
    • 0.8% VTTREF, 20-mV VTT accuracy
    • Support high-z in S3 and soft-off in S4/S5
  • Thermal shutdown
  • 20-Pin, 3 mm × 3 mm, WQFN Package
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled baseline
    • One assembly/test site
    • One fabrication site
    • Available in military (–55°C to 125°C) temperature range (1)
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability

(1)Additional temperature ranges available - contact factory

The TPS51216-EP provides a complete power supply for DDR2, DDR3 and DDR3L memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered low noise reference (VTTREF). The TPS51216-EP employs D-CAP™ mode coupled with 300 kHz/400 kHz frequencies for ease-of-use and fast transient response. The VTTREF tracks VDDQ/2 within excellent 0.8% accuracy. The VTT, which provides 2-A sink/source peak current capabilities, requires only 10-µF of ceramic capacitance. In addition, a dedicated LDO supply input is available.

The TPS51216-EP provides rich useful functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF (soft-off) in S4/S5 state.

The TPS51216-EP provides a complete power supply for DDR2, DDR3 and DDR3L memory systems in the lowest total cost and minimum space. It integrates a synchronous buck regulator controller (VDDQ) with a 2-A sink/source tracking LDO (VTT) and buffered low noise reference (VTTREF). The TPS51216-EP employs D-CAP™ mode coupled with 300 kHz/400 kHz frequencies for ease-of-use and fast transient response. The VTTREF tracks VDDQ/2 within excellent 0.8% accuracy. The VTT, which provides 2-A sink/source peak current capabilities, requires only 10-µF of ceramic capacitance. In addition, a dedicated LDO supply input is available.

The TPS51216-EP provides rich useful functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF (soft-off) in S4/S5 state.

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Technische Dokumentation

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Alle anzeigen 3
Typ Titel Datum
* Data sheet TPS51216-EP Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered Reference datasheet (Rev. A) PDF | HTML 29 Mär 2022
* VID TPS51216-EP VID V6216601 27 Mär 2018
* Radiation & reliability report TPS51216MRUKREP Reliability Report 11 Apr 2016

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Simulationsmodell

TPS51216 PSpice Transient Model

SLUM395.ZIP (67 KB) - PSpice Model
Simulationsmodell

TPS51216 TINA-TI Transient Reference Design

SLUM459.TSC (648 KB) - TINA-TI Reference Design
Simulationsmodell

TPS51216 TINA-TI Transient Spice Model

SLUM458.ZIP (72 KB) - TINA-TI Spice Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
WQFN (RUK) 20 Ultra Librarian

Bestellen & Qualität

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  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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  • Werksstandort
  • Montagestandort

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