Información de empaque
| Encapsulado | Pines SOIC (D) | 16 |
| Rango de temperatura de funcionamiento (℃) -40 to 125 |
| Cant. de paquetes | Empresa de transporte 250 | SMALL T&R |
Características para UCC28065
- Input
filter and output capacitor ripple-current reduction
- Reduced current ripple for higher system reliability and smaller bulk capacitor
- Reduced EMI filter size
- Higher switching frequency support
- Up-to 800-kHz switching frequency, reducing boost inductor size to at least one-half in size
- Improved input-current THD
- High light-load efficiency
- User adjustable phase management with input voltage compensation
- Burst mode operation with adjustable burst threshold
- Helps enable compliance to EUP Lot6 tier II, CoC tier II and DOE Level VI standards
- Sensorless current-shaping simplifies board layout and improves efficiency
- Input line feed-forward for fast line transient response
- Inrush-safe current limiting:
- Prevents MOSFET conduction during inrush
- Eliminates CCM operation and reverse recovery events in output rectifier
Descripción de UCC28065
The UCC28065 interleaved PFC controller enables transition mode PFC at higher power ratings than previously possible. The device uses a Natural Interleaving™ technique to maintain a 180-degree phase shift. Both channels operate as masters (there is no slave channel) synchronized to the same frequency. This approach enables faster response time, accurate phase shift, and transition mode operation for each channel. The device has a burst mode function to get high light-load efficiency. Burst mode eliminates the need to turn off the PFC during light load operation to meet standby power targets, eliminating the need for an auxiliary Flyback when paired with UCC25640x LLC controller and the UCC24612 or UCC24624 synchronous rectifier controllers. The increased frequency clamping doubles the switching frequency capability compared with previous generation devices. The increased switching frequency range also allows the design to fully utilize the benefits of GaN MOSFETs such as LMG3410 and SiC MOSFETs.
Expanded system level protections features include input brownout and dropout recovery, output over-voltage, open-loop, overload, soft-start, phase-fail detection, and thermal shutdown. The additional fail-safe over-voltage protection (OVP) feature protects against shorts to an intermediate voltage that, if undetected, could lead to catastrophic device failure. Advanced non-linear gain results in rapid, yet smooth response to line and load transient events. Special line-dropout handling avoids significant current disruption. Strong reduction of bias current when not switching during burst mode operation, improves stand-by performance.