UCC27517A-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Automotive Qualified Grade 1: –40°C
to 125°C Ambient Operating Temperature
Range - Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
- Device Automotive Qualified Grade 1: –40°C
- Low-Cost Gate-Driver Device Offering Superior
Replacement of NPN and PNP Discrete Solutions - 4-A Peak-Source and Sink Symmetrical Drive
- Ability to Handle Negative Voltages (–5 V) at
Inputs - Fast Propagation Delays (13-ns typical)
- Fast Rise and Fall Times (9-ns and 7-ns typical)
- 4.5 to 18-V Single-Supply Range
- Outputs Held Low During VDD UVLO (ensures
glitch-free operation at power up and power down) - TTL and CMOS Compatible Input-Logic Threshold
(independent of supply voltage) - Hysteretic-Logic Thresholds for High-Noise
Immunity - Dual Input Design (choice of an inverting (IN– pin)
or non-inverting (IN+ pin) driver configuration)- Unused Input Pin can be Used for Enable or
Disable Function
- Unused Input Pin can be Used for Enable or
- Output Held Low when Input Pins are Floating
- Input Pin Absolute Maximum Voltage Levels Not
Restricted by VDD Pin Bias Supply Voltage - Operating Temperature Range of –40°C to 140°C
- 5-Pin DBV (SOT-23) Package Option
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27517A-Q1 device handles –5 V at input.
The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | UCC27517A-Q1 Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 4-A Peak Source and Sink) datasheet (Rev. B) | PDF | HTML | 2015/08/28 |
| Application note | Selecting Gate Drivers for HVAC Systems | PDF | HTML | 2024/04/04 | |
| Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024/01/22 | |
| Functional safety information | UCC27517A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA | PDF | HTML | 2021/06/16 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019/01/18 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018/10/29 |
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| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOT-23 (DBV) | 5 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
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- 조립 위치
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