ISO5451
- 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
- 2.5-A Peak Source and 5-A Peak Sink Currents
- Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
- 2-A Active Miller Clamp
- Output Short-Circuit Clamp
- Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
- Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
- Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
- 3-V to 5.5-V Input Supply Voltage
- 15-V to 30-V Output Driver Supply Voltage
- CMOS Compatible Inputs
- Rejects Input Pulses and Noise Transients Shorter Than 20 ns
- Operating Temperature: –40°C to +125°C Ambient
- Isolation Surge Withstand Voltage 10000-V PK
- Safety-Related Certifications:
- 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-V RMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.
The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
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ISO5851EVM — ISO5851 評估模組 (EVM)
This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDA-00638 — 具有主動米勒鉗位且適用於太陽能逆變器的隔離式閘極驅動器功率級參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
訂購與品質
- RoHS
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- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
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建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。