LM5109
- Drives both a high side and low side N-Channel MOSFET
- 1A peak output current (1.0A sink / 1.0A source)
- Independent TTL compatible inputs
- Bootstrap supply voltage to 118V DC
- Fast propagation times (27 ns typical)
- Drives 1000 pF load with 15ns rise and fall times
- Excellent propagation delay matching (2 ns typical)
- Supply rail under-voltage lockout
- Low power consumption
- Pin compatible with ISL6700
The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LM5109 100V / 1A Peak Half Bridge Gate Driver datasheet | 2005年 4月 26日 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
White paper | Power Electronics in Motor Drives: Where is it? (Rev. A) | 2019年 10月 1日 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 |
設計與開發
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。