SM74101
- Renewable Energy Grade
- Compound CMOS and Bipolar Outputs Reduce
Output Current Variation - 7A sink/3A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise/Fall
with 2 nF Load) - Inverting and Non-Inverting Inputs Provide Either
Configuration with a Single Device - Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply
or Single Supply Operation - Power Enhanced 6-Pin WSON Package (3.0mm ×
3.0mm) - Output Swings from VCC to VEE which can be
Negative Relative to Input Ground
The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技術文件
設計與開發
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PMP9461 — 適用於太陽能微型逆變器 DC/DC 和 DC/AC 參考設計的閘極驅動和偏壓電源解決方案
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
WSON (NGG) | 6 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。