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TPS53317A

現行

適用 DDR VTT 的 0.9V-6V 輸入、6-A 輸出、D-CAP+ 模式 SWIFT 同步降壓轉換器

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產品規格表

TPS53317A

現行
產品規格表 立即訂購

產品詳細資料

Vin (min) (V) 0.9 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Eco Mode, Fixed PWM Mode, Power good, Tracking/Non-Tracking Mode Iq (typ) (mA) 0.32 Rating Catalog Operating temperature range (°C) -40 to 125 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
Vin (min) (V) 0.9 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Eco Mode, Fixed PWM Mode, Power good, Tracking/Non-Tracking Mode Iq (typ) (mA) 0.32 Rating Catalog Operating temperature range (°C) -40 to 125 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
VQFN (RGB) 20 14 mm² 4 x 3.5
  • TI-Proprietary Integrated MOSFET and Packaging Technology
  • Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
  • External Tracking
  • Minimum External Components Count
  • to 6-V Conversion Voltage
  • D-CAP+ Mode Architecture
  • Supports All MLCC Output Capacitors and SP/POSCAP
  • Selectable SKIP Mode or Forced CCM
  • Optimized Efficiency at Light and Heavy Loads
  • Selectable 600-kHz or 1-MHz Switching Frequency
  • Selectable Overcurrent Limit (OCL)
  • Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
  • Adjustable Output Voltage from to 2 V
  • 3.5 mm × 4 mm, 20-Pin, VQFN Package
  • TI-Proprietary Integrated MOSFET and Packaging Technology
  • Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
  • External Tracking
  • Minimum External Components Count
  • to 6-V Conversion Voltage
  • D-CAP+ Mode Architecture
  • Supports All MLCC Output Capacitors and SP/POSCAP
  • Selectable SKIP Mode or Forced CCM
  • Optimized Efficiency at Light and Heavy Loads
  • Selectable 600-kHz or 1-MHz Switching Frequency
  • Selectable Overcurrent Limit (OCL)
  • Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
  • Adjustable Output Voltage from to 2 V
  • 3.5 mm × 4 mm, 20-Pin, VQFN Package

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with bothsink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device canalso be used for other point-of-load (POL) regulation applications requiring up to 6 A. Inaddition, the device supports full, 6-A, output sinking current capability with tight voltageregulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrateddroop support, external tracking capability, pre-bias startup, output soft discharge, integratedbootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic andSP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V.

The device is available in the 3.5 mm × 4 mm, 20-pin, VQFNpackage (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.

For all available packages, see the orderable addendum at the end of the data sheet.

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with bothsink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device canalso be used for other point-of-load (POL) regulation applications requiring up to 6 A. Inaddition, the device supports full, 6-A, output sinking current capability with tight voltageregulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrateddroop support, external tracking capability, pre-bias startup, output soft discharge, integratedbootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic andSP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V.

The device is available in the 3.5 mm × 4 mm, 20-pin, VQFNpackage (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.

For all available packages, see the orderable addendum at the end of the data sheet.
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類型 標題 日期
* Data sheet TPS53317A 6-A Output, D-CAP+ Mode, Synchronous Step-Down, Integrated-FET Converter for DDR Memory Termination datasheet (Rev. A) PDF | HTML 2015年 11月 10日
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 2024年 4月 30日
Application note Point-of-Load Solutions for Data Center App Implementing VR13.HC Vccin Spec (Rev. A) PDF | HTML 2020年 1月 8日
Technical article Voltage regulator features – inside the black box PDF | HTML 2016年 5月 31日
Technical article Simplifying loop compensation and poles and zeros calculations PDF | HTML 2016年 3月 18日
EVM User's guide Using the TPS53317AEVM-726 2015年 11月 18日

設計與開發

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開發板

TPS53317AEVM-726 — 適用於 DDR VTT 的同步降壓轉換器評估模組

The TPS53317AEVM-726 is designed to demonstrate the TPS53317A in a typical low voltage application, simulating a DDR4 enviroment, while providing a number of test points to evaluate the performance of TPS53317A. The TPS53317AEVM-726 is designed to use a 1.2-V voltage rail to produce a regulated (...)

使用指南: PDF
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模擬型號

TPS53317A PSpice Transient Model

SLUM499.ZIP (130 KB) - PSpice Model
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參考設計

PMP11399 — 企業乙太網路交換器 PMBus 電源系統參考設計

PMP11399 is a complete PMBus power system for 3 ASIC/FPGA cores, DDR3 core memory, VTT termination, and auxiliary voltages commonly found on high-performance Ethernet Switches. The hardware is accompanied by a GUI that allows the user to perform real-time configuration and monitoring of the power (...)
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGB) 20 Ultra Librarian
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