UC3710
- Totem Pole Output with 6A Source/Sink Drive
- 3ns Delay
- 20ns Rise and Fall Time into 2.2nF
- 8ns Rise and Fall Time into 30nF
- 4.7V to 18V Operation
- Inverting and Non-Inverting Outputs
- Under-Voltage Lockout with Hysteresis
- Thermal Shutdown Protection
- MINIDIP and Power Packages
The UC1710 family of FET drivers is made with a high-speed Schottky process to interface between low-level control functions and very high-power switching devices-particularly power MOSFET\x92s. These devices accept low-current digital inputs to activate a high-current, totem pole output which can source or sink a minimum of 6A.
Supply voltages for both VIN and VC can independently range from 4.7V to 18V. These devices also feature under-voltage lockout with hysteresis.
The UC1710 is packaged in an 8-pin hermetically sealed dual in-line package for \x9655°C to +125°C operation. The UC2710 and UC3710 are specified for a temperature range of \x9640°C to +85°C and 0°C to +70°C respectively and are available in either an 8-pin plastic dual in-line or a 5-pin, TO-220 package. Surface mount devices are also available.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | High Current FET Driver datasheet | 1999年 9月 5日 | |
Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024年 1月 22日 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 |
設計與開發
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
PDIP (P) | 8 | Ultra Librarian |
SOIC (DW) | 16 | Ultra Librarian |
TO-220 (KC) | 5 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點