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UCC21320-Q1

現行

採用 DWK 封裝且具有可編程失效時間的車用 3.75kVrms、4A/6A 雙通道絕緣式閘極驅動器

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產品規格表

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UCC21320-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 5303, 6250 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Rise time (ns) 6 Fall time (ns) 19 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 5303, 6250 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Rise time (ns) 6 Fall time (ns) 19 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide body SOIC-14 (DWK) package
    • 3.3mm spacing between driver channels
  • Junction temperature range –40 to +150°C
  • TTL and CMOS compatible inputs
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide body SOIC-14 (DWK) package
    • 3.3mm spacing between driver channels
  • Junction temperature range –40 to +150°C
  • TTL and CMOS compatible inputs
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1

The UCC21320-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 3.75kVRMS basic isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

The UCC21320-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 3.75kVRMS basic isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.
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* Data sheet UCC21320 -Q1 4A, 6A, 3.75kVRMS Isolated Dual-Channel Gate Driver for Automotive datasheet (Rev. A) PDF | HTML 2024年 8月 23日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日

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