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UCC21550-Q1

現行

具有 IGBT 專用 DIS 和 DT 針腳的車用 4A/6A、5-kVRMS 雙通道隔離式閘極驅動器

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產品規格表

UCC21550-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Transient isolation voltage (VIOTM) (VPK) 7070 TI functional safety category Functional Safety-Capable Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Transient isolation voltage (VIOTM) (VPK) 7070 TI functional safety category Functional Safety-Capable Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3 SOIC (DWK) 14 106.09 mm² 10.3 x 10.3

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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類型 標題 日期
* Data sheet UCC21550x-Q1 Automotive 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. D) PDF | HTML 2024年 8月 9日
Certificate CQC Certificate for UCC21551xx 2024年 8月 27日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日

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開發板

UCC21520EVM-286 — UCC21520 4A/6A 隔離式雙通道閘極驅動器評估模組

UCC21520EVM-286 is designed for evaluating UCC21520DW, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current capability. This EVM could be served as a reference design for driving power MOSFETS, IGBTS, and SiC MOSFETS with UCC21520 pin function identification, (...)

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模擬型號

UCC21550B-Q1 PSpice Model

SLUM881.ZIP (157 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DW) 16 Ultra Librarian
SOIC (DWK) 14 Ultra Librarian
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