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UCC21737-Q1

現行

適用於 SiC/IGBT、主動短路防護的車用 10-A 隔離單通道閘極驅動器

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產品規格表

UCC21737-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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* Data sheet UCC21737-Q1 Automotive 10A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. C) PDF | HTML 2024年 6月 17日
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024年 12月 11日
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024年 7月 19日
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 2023年 6月 7日

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UCC21732QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)

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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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