UCC27614-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified
- Device Temperature Grade 1
- Typical 10A sink 10A source output currents
- Input and enable pins capable of withstanding up to –10V
- Absolute maximum VDD voltage: 30V
- Wide VDD operating range from 4.5V to 26V with UVLO
- Available in 2mm x 2mm SON8 package
- Typical 17.5ns propagation delay
- EN (enable) pin in SOIC8 and VSSOP8 package
- IN– pin can be used for enable and disable functionality in SON8 package
- VDD independent input thresholds (TTL compatible)
- Can be used as inverting or noninverting driver
- Operating junction temperature range of –40°C to 150°C
The UCC27614-Q1 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. The UCC27614-Q1 has a typical peak drive strength of 10A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The small propagation delay of the UCC27614-Q1 yields better power stage efficiency by improving dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.
The UCC27614-Q1 can handle –10V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614-Q1 performs well in such conditions due to its transient reverse current and reverse voltage capability.
The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The 10A drive current of the UCC27614-Q1 in the 2mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC27614-Q1 30 V, 10A Single Channel Low-Side Gate Driver with –10V Input Capability for Automotive Applications datasheet (Rev. A) | PDF | HTML | 2024年 10月 7日 |
設計與開發
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UCC27614EVM — 適用於單通道 30-V、10-A 高速低壓側閘極驅動器的 UCC27614 評估模組
UCC27614 評估模組 (EVM) 專為評估 TI 的 30-V、10-A 單通道 2 × 2 閘極驅動器而設計。此 EVM 的目標是依產品規格書參數評估驅動器 IC。驅動器 IC 可針對各種電容與電阻負載進行評估。EVM 可以設定為反相或非反相配置。EVM 具備評估 TO-220 體積功率電晶體的佈建。
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
WSON (DSG) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點