現在提供此產品的更新版本
可直接投入的替代產品,相較於所比較的裝置,具備升級功能
UCC5881-Q1
- Dual-output driver with real time variable drive strength
- ±15A and ±5A drive current outputs
- Digital input pins (GD*) for drive strength adjustment without SPI
- 3 resistor settings R1, R2, or R1||R2
- Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
- Primary-side and secondary-side active short circuit (ASC) support
- Under-voltage and over-voltage protection on internal and external supplies
- Driver die temperature sensing and over temperature protection
- Short-circuit protection:
- 110ns response time to DESAT event
- DESAT protection – selections up to 14V
- Shunt resistor based short-circuit (SC) and over-current (OC) protection
- Configurable protection threshold values and blanking times
- Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
- Integrated 10-bit ADC
- Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
- Programmable digital comparators
- Advanced VCE/VDS clamping circuit
- Functional Safety-Compliant
- Developed for functional safety applications
- Documentation available to aid ISO 26262 system design up to ASIL D
- Integrated diagnostics:
- Built in self-test (BIST) for protection comparators
- Gate threshold voltage measurement for power device health monitoring
- INP to transistor gate path integrity
- Internal clock monitoring
- Fault alarm and warning outputs (nFLT*)
- ISO communication data integrity check
- SPI based device reconfiguration, verification, supervision, and diagnosis
- 150V/ns CMTI
- AEC-Q100 qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature
- Device HBM ESD classification level 2
- Device CDM ESD classification level C2b
The UCC5881-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC5881-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet | PDF | HTML | 2024年 12月 13日 |
設計與開發
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UCC5880INVERTEREVM — 適用於牽引變流器中可變隔離式閘極驅動器的 UCC5880-Q1 評估模組
UCC5880INVERTEREVM 電路板可獨立用於測試板上焊接 100nF 電容器負載的 UCC5880-Q1 驅動器,也可用於直接驅動 Wolfspeed XM3 SiC 式半橋電源模組,以進行高功率測試。電路板含有兩個 UCC14240-Q1 隔離式偏壓電源。EVM 具備配置不同 SPI 通訊方式的彈性,其中包括一般 SPI、菊輪鍊及 TI 位址架構。EVM 可與 Sitara™ 和 C2000™ 即時微控制器控制卡介接,用於高達 300kW 的三相逆變器測試
UCC5880QEVM-057 — UCC5880-Q1 評估模組
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDM-02014 — 高功率、高性能車用 SiC 牽引變流器參考設計
PMP31236 — Gate driver reference design for HybridPACK™ Drive IGBT modules
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SSOP (DFC) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。