SLVA959B November   2018  – October 2021 DRV10866 , DRV10963 , DRV10964 , DRV10970 , DRV10974 , DRV10975 , DRV10983 , DRV10983-Q1 , DRV10987 , DRV11873 , DRV3205-Q1 , DRV3220-Q1 , DRV3245E-Q1 , DRV3245Q-Q1 , DRV8301 , DRV8302 , DRV8303 , DRV8304 , DRV8305 , DRV8305-Q1 , DRV8306 , DRV8307 , DRV8308 , DRV8312 , DRV8313 , DRV8320 , DRV8320R , DRV8323 , DRV8323R , DRV8332 , DRV8343-Q1 , DRV8350 , DRV8350R , DRV8353 , DRV8353R , DRV8412 , DRV8701 , DRV8702-Q1 , DRV8702D-Q1 , DRV8703-Q1 , DRV8703D-Q1 , DRV8704 , DRV8711 , DRV8800 , DRV8801 , DRV8801-Q1 , DRV8801A-Q1 , DRV8802 , DRV8802-Q1 , DRV8803 , DRV8804 , DRV8805 , DRV8806 , DRV8811 , DRV8812 , DRV8813 , DRV8814 , DRV8816 , DRV8818 , DRV8821 , DRV8823 , DRV8823-Q1 , DRV8824 , DRV8824-Q1 , DRV8825 , DRV8828 , DRV8829 , DRV8830 , DRV8832 , DRV8832-Q1 , DRV8833 , DRV8833C , DRV8834 , DRV8835 , DRV8836 , DRV8837 , DRV8837C , DRV8838 , DRV8839 , DRV8840 , DRV8841 , DRV8842 , DRV8843 , DRV8844 , DRV8846 , DRV8847 , DRV8848 , DRV8850 , DRV8860 , DRV8870 , DRV8871 , DRV8871-Q1 , DRV8872 , DRV8872-Q1 , DRV8873-Q1 , DRV8880 , DRV8881 , DRV8884 , DRV8885 , DRV8886 , DRV8886AT , DRV8889-Q1

 

  1.   Trademarks
  2. 1Grounding Optimization
    1. 1.1 Frequently Used Terms/Connections
    2. 1.2 Using a Ground Plane
      1. 1.2.1 Two-Layer Board Techniques
    3. 1.3 Common Problems
      1. 1.3.1 Capacitive and Inductive Coupling
      2. 1.3.2 Common and Differential Noise
    4. 1.4 EMC Considerations
  3. 2Thermal Overview
    1. 2.1 PCB Conduction and Convection
    2. 2.2 Continuous Top-Layer Thermal Pad
    3. 2.3 Copper Thickness
    4. 2.4 Thermal Via Connections
    5. 2.5 Thermal Via Width
    6. 2.6 Summary of Thermal Design
  4. 3Vias
    1. 3.1 Via Current Capacity
    2. 3.2 Via Layout Recommendations
      1. 3.2.1 Multi-Via Layout
      2. 3.2.2 Via Placement
  5. 4General Routing Techniques
  6. 5Bulk and Bypass Capacitor Placement
    1. 5.1 Bulk Capacitor Placement
    2. 5.2 Charge Pump Capacitor
    3. 5.3 Bypass/Decoupling Capacitor Placement
      1. 5.3.1 Near Power Supply
      2. 5.3.2 Near Power Stage
      3. 5.3.3 Near Switch Current Source
      4. 5.3.4 Near Current Sense Amplifiers
      5. 5.3.5 Near Voltage Regulators
  7. 6MOSFET Placement and Power Stage Routing
    1. 6.1 Common Power MOSFET Packages
      1. 6.1.1 DPAK
      2. 6.1.2 D2PAK
      3. 6.1.3 TO-220
      4. 6.1.4 8-Pin SON
    2. 6.2 MOSFET Layout Configurations
    3. 6.3 Power Stage Layout Design
      1. 6.3.1 Switch Node
      2. 6.3.2 High-Current Loop Paths
      3. 6.3.3 VDRAIN Sense Pin
  8. 7Current Sense Amplifier Routing
    1. 7.1 Single High-Side Current Shunt
    2. 7.2 Single Low-Side Current Shunt
    3. 7.3 Two-Phase and Three-Phase Current Shunt Amplifiers
    4. 7.4 Component Selection
    5. 7.5 Placement
    6. 7.6 Routing
    7. 7.7 Useful Tools (Net Ties and Differential Pairs)
    8. 7.8 Input and Output Filters
    9. 7.9 Do's and Don'ts
  9. 8References
  10. 9Revision History

6.3.1 Switch Node

The switch-node is the connection between the source pin of the high-side MOSFET and drain pin of the low-side MOSFET as shown in Figure 6-10. This node is the net that is ultimately connected to the load, which is a motor in this application. The switch node is the most critical signal to be routed in the half-bridge configuration because the high-frequency, high-current nature of the signal on this net. The circuit shown in Figure 6-8 has many non-ideal parasitics caused by the PCB and the power MOSFETs. Figure 6-9 shows a few of these primary parasitics which are the primary causes of a phenomenon called switch-node ringing.

GUID-854231E0-15D4-40FC-8BCD-FFCCC4D2CD4C-low.gifFigure 6-9 Half-Bridge Parasitics

Switch-node ringing is an LC oscillation on the switch-node due to the parasitics of the PCB and power MOSFETs. Switch-node ringing causes EMI and creates overshoot and undershoot voltages which can violate the absolute maximum ratings of the MOSFET drain-to-source voltage and the gate driver pins. It also can decrease the efficiency of the power stage.

Methods are available to address switch-node ringing through the external measures and system adjustments (reducing slew rates, external snubbers, and others) but a fundamentally sound layout can address many of these primary issues. The layout example in Figure 6-10 shows a design that minimizes the inductance between the source of the high-side MOSFET and drain of the low-side MOSFET. Best practice is to minimize the length and maximize the width of the copper plane connection and using MOSFET packages with minimum parasitic inductance.

GUID-BA51702E-E90E-4290-9C80-7D51EFB960C5-low.gifFigure 6-10 Switch-Node Layout Example