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BQ500101

AKTIV

NexFET-Leistungsstufe

Produktdetails

VDS (V) 30 Ploss current (A) 5 Rating Catalog Operating temperature range (°C) -40 to 125
VDS (V) 30 Ploss current (A) 5 Rating Catalog Operating temperature range (°C) -40 to 125
VSON-CLIP (DPC) 8 15.75 mm² 4.5 x 3.5
  • 98% System Efficiency at 5 A
  • Max Rated Continuous Current 10 A, Peak 15 A
  • High-Frequency Operation (up to 600 kHz)
  • High-Density SON 3.5 × 4.5 mm Footprint
  • Ultra-Low Inductance Package
  • System Optimized PCB Footprint
  • 3.3-V and 5-V PWM Signal Compatible
  • Input Voltages up to 24 V
  • Integrated Bootstrap Diode
  • Shoot-Through Protection
  • RoHS Compliant – Lead Free Terminal Plating
  • Halogen Free
  • Optimized Power Stage Containing High-
    Efficiency Gate Drivers and FETs
  • Optimized for 15-W Wireless Power Transmitter Designs
  • 98% System Efficiency at 5 A
  • Max Rated Continuous Current 10 A, Peak 15 A
  • High-Frequency Operation (up to 600 kHz)
  • High-Density SON 3.5 × 4.5 mm Footprint
  • Ultra-Low Inductance Package
  • System Optimized PCB Footprint
  • 3.3-V and 5-V PWM Signal Compatible
  • Input Voltages up to 24 V
  • Integrated Bootstrap Diode
  • Shoot-Through Protection
  • RoHS Compliant – Lead Free Terminal Plating
  • Halogen Free
  • Optimized Power Stage Containing High-
    Efficiency Gate Drivers and FETs
  • Optimized for 15-W Wireless Power Transmitter Designs

The bq500101 NexFET Power Stage is optimized for wireless power applications covering the WPC v1.2 medium power specification. The device can be used for both the rail voltage control in fixed frequency transmitter types as well as the coil drivers for both fixed and variable frequency types. This combination produces a high-current, high-efficiency, and high-speed switching device in a small 3.5 × 4.5 mm outline package. In addition, the PCB footprint is optimized to help reduce design time and simplify the completion of the overall system design.

The bq500101 NexFET Power Stage is optimized for wireless power applications covering the WPC v1.2 medium power specification. The device can be used for both the rail voltage control in fixed frequency transmitter types as well as the coil drivers for both fixed and variable frequency types. This combination produces a high-current, high-efficiency, and high-speed switching device in a small 3.5 × 4.5 mm outline package. In addition, the PCB footprint is optimized to help reduce design time and simplify the completion of the overall system design.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet bq500101 NexFET Power Stage datasheet PDF | HTML 03 Mär 2016
EVM User's guide bq501210 bqTESLA™ Wireless Power TX EVM 09 Jun 2016

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Simulationsmodell

BQ500101 PSpice Transient Model

SLPM277.ZIP (49 KB) - PSpice Model
Simulationsmodell

BQ500101 TINA-TI Reference Design

SLPM275.TSC (179 KB) - TINA-TI Reference Design
Simulationsmodell

BQ500101 TINA-TI Transient Spice Model

SLPM276.ZIP (51 KB) - TINA-TI Spice Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
VSON-CLIP (DPC) 8 Ultra Librarian

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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