With an integrated high-side power MOSFET, the LM5012-Q1 delivers up to 2.5 A of output current. A constant on-time (COT) control architecture provides nearly constant switching frequency with excellent load and line transient response. Additional features of the LM5012-Q1 include ultra-low IQ operation for high light-load efficiency, innovative peak overcurrent protection, integrated VCC bias supply and bootstrap diode, precision enable and input UVLO, and thermal shutdown protection with automatic recovery. An open-drain PGOOD indicator provides sequencing, fault reporting, and output voltage monitoring.
The LM5012-Q1 2.5 A is qualified to automotive AEC-Q100 grade 1 and is available in a 8-pin SO PowerPAD™ integrated circuit package. The device 1.27-mm pin pitch provides adequate spacing for high-voltage applications.
With an integrated high-side power MOSFET, the LM5012-Q1 delivers up to 2.5 A of output current. A constant on-time (COT) control architecture provides nearly constant switching frequency with excellent load and line transient response. Additional features of the LM5012-Q1 include ultra-low IQ operation for high light-load efficiency, innovative peak overcurrent protection, integrated VCC bias supply and bootstrap diode, precision enable and input UVLO, and thermal shutdown protection with automatic recovery. An open-drain PGOOD indicator provides sequencing, fault reporting, and output voltage monitoring.
The LM5012-Q1 2.5 A is qualified to automotive AEC-Q100 grade 1 and is available in a 8-pin SO PowerPAD™ integrated circuit package. The device 1.27-mm pin pitch provides adequate spacing for high-voltage applications.