Gehäuseinformationen
| Gehäuse | Pins WSON (NGG) | 6 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 4.500 | LARGE T&R |
Merkmale von SM74101
- Renewable Energy Grade
- Compound CMOS and Bipolar Outputs Reduce
Output Current Variation - 7A sink/3A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise/Fall
with 2 nF Load) - Inverting and Non-Inverting Inputs Provide Either
Configuration with a Single Device - Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply
or Single Supply Operation - Power Enhanced 6-Pin WSON Package (3.0mm ×
3.0mm) - Output Swings from VCC to VEE which can be
Negative Relative to Input Ground
Beschreibung von SM74101
The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.