Gehäuseinformationen
| Gehäuse | Pins PDIP (P) | 8 |
| Betriebstemperaturbereich (°C) 0 to 70 |
| Gehäusemenge | Träger 50 | TUBE |
Merkmale von SN75372
- Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds
- Output Supply Voltage Range up to 24 V
- Low Standby Power Dissipation
Beschreibung von SN75372
The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage levels necessary to drive large capacitive loads at high speeds. The device operates from a VCC1 of 5 V and a VCC2 of up to 24 V.
The SN75372 is characterized for operation from 0°C to 70°C.