Startseite Energiemanagement AC/DC- und DC/DC-Controller (externer FET)

TPS53632G

AKTIV

D-CAP+-Controller in Half-Bridge-Technologie für GaN-DC/DC-Wandler, 48 V

Produktdetails

Vin (max) (V) 3.6 Operating temperature range (°C) -10 to 105 Control mode Current Topology Multiphase Rating Catalog Features Light-load efficiency Duty cycle (max) (%) 50
Vin (max) (V) 3.6 Operating temperature range (°C) -10 to 105 Control mode Current Topology Multiphase Rating Catalog Features Light-load efficiency Duty cycle (max) (%) 50
VQFN (RSM) 32 16 mm² 4 x 4
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS53632G D-CAP+™ Half-Bridge PWM Controller Optimized for GaN-based 48-V DC/DC Converter with I2C Interface datasheet (Rev. A) PDF | HTML 10 Jun 2016
EVM User's guide Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 02 Aug 2017
Technical article Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 05 Jul 2016
Technical article Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 28 Mär 2016

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

LMG5200POLEVM-10 — Evaluierungsmodul für Point-of-Load-Anwendung mit LMG5200-GaN 48 V bis 1 V Point of Load Evaluation

Das LMG5200POLEVM-10 EVM wurde für die Evaluierung der Leistungsstufe LMG5200 GaN und des Halbbrücken-Point-of-Load-Reglers TPS53632G in einer „48 V auf 1 V“ Anwendung zu evaluieren. Dieses EVM implementiert den 48 V/1 V-Wandler als einstufige hart schaltende Halbbrücke mit (...)

Benutzerhandbuch: PDF
Stückliste (BOM)

PMP4497 BOM

TIDRNB1.PDF (67 KB)
Schaltplan

PMP4497 Schematic

TIDRNB0.PDF (519 KB)
Referenzdesigns

PMP22089 — Referenzdesign für Halbbrücken-Point-of-Load-Wandler mit GaN-Technologie

This reference design modifies the inboard transformer turns ratio from 5:1 to 3:1 to reduce input the range. The board supports input voltages from 24 V to 32 V and output voltages between 0.5 V to 1.0 V with output currents up to 40 A. This topology efficiently supports the high step-down ratio (...)
Test report: PDF
Schaltplan: PDF
Referenzdesigns

PMP4497 — Referenzdesign für einstufigen LMG5200-Wandler mit 48 V bis 1 V/40 A

The PMP4497 is a GaN-based reference design solution for the Vcore such as FPGA, ASIC applications. With high integration and low switching loss, the GaN module LMG5200 enables a high efficiency single stage from 48V to 1.0V solution to replace the traditional 2-stage solution. This design shows (...)
Test report: PDF
Schaltplan: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
VQFN (RSM) 32 Ultra Librarian

Bestellen & Qualität

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  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
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