The RES60A-Q1 is a matched resistive divider, implemented in thin-film SiCr with Texas Instruments modern, high-performance, analog wafer process. A high quality SiO2 insulative layer encapsulates the resistors and enables usage at extremely high voltages, up to 1400VDC for sustained operation or 4000VDC for HiPOT testing (60s). The device has a nominal input resistance of RHV = 12.5MΩ, and is available in several nominal ratios to meet a wide array of system needs.
The RES60A-Q1 series features high ratio matching precision, with the measured ratio of each divider within ±0.1% (max) of the nominal. This precision is maintained over the specified temperature range and aging, with a cumulative drift of only ±0.2% (max). Therefore, the lifetime tolerance of an uncalibrated RES60A-Q1 remains within a ±0.3% (max) envelope.
The RES60A-Q1 is automotive qualified under AEC-Q200 temperature grade 1, with a specified temperature range from –40°C to +125°C. The device is offered in an 8-pin SOIC package, with nominal body size 7.5mm × 5.85mm, and features creepage and clearance distances of at least 8.5mm between the high-voltage and low-voltage pins.
The RES60A-Q1 is a matched resistive divider, implemented in thin-film SiCr with Texas Instruments modern, high-performance, analog wafer process. A high quality SiO2 insulative layer encapsulates the resistors and enables usage at extremely high voltages, up to 1400VDC for sustained operation or 4000VDC for HiPOT testing (60s). The device has a nominal input resistance of RHV = 12.5MΩ, and is available in several nominal ratios to meet a wide array of system needs.
The RES60A-Q1 series features high ratio matching precision, with the measured ratio of each divider within ±0.1% (max) of the nominal. This precision is maintained over the specified temperature range and aging, with a cumulative drift of only ±0.2% (max). Therefore, the lifetime tolerance of an uncalibrated RES60A-Q1 remains within a ±0.3% (max) envelope.
The RES60A-Q1 is automotive qualified under AEC-Q200 temperature grade 1, with a specified temperature range from –40°C to +125°C. The device is offered in an 8-pin SOIC package, with nominal body size 7.5mm × 5.85mm, and features creepage and clearance distances of at least 8.5mm between the high-voltage and low-voltage pins.