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TPS51116-EP

ACTIVO

Conmutador DDR1, DDR2, DDR3 y LDO, producto mejorado

Detalles del producto

Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.75 Vout (max) (V) 3 Features Complete Solution, Shutdown Pin for S3 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Iq (typ) (mA) 0.8 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
Vin (min) (V) 3 Vin (max) (V) 28 Vout (min) (V) 0.75 Vout (max) (V) 3 Features Complete Solution, Shutdown Pin for S3 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Iq (typ) (mA) 0.8 Product type DDR DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
HTSSOP (PWP) 20 41.6 mm² 6.5 x 6.4
  • Synchronous Buck Controller (VDDQ)
    • Wide-Input Voltage Range: 3.0-V to 28-V
    • D−CAP™ Mode with 100-ns Load Step Response
    • Current Mode Option Supports Ceramic Output Capacitors
    • Supports Soft-Off in S4/S5 States
    • Current Sensing from RDS(on) or Resistor
    • 2.5-V (DDR), 1.8-V (DDR2), Adjustable to
      1.5-V (DDR3) or 1.2-V (LPDDR3) or
      Output Range 0.75-V to 3.0-V
    • Equipped with Powergood, Overvoltage Protection and
      Undervoltage Protection
  • 1-A LDO (VTT), Buffered Reference (VREF)
    • Capable to Sink and Source 1 A
    • LDO Input Available to Optimize Power Losses
    • Requires only 20-7micro;F Ceramic Output Capacitor
    • Buffered Low Noise 10-mA VREF Output
    • Accuracy ±20 mV for both VREF and VTT
    • Supports High-Z in S3 and Soft-Off in S4/S5
    • Thermal Shutdown

APPLICATONS

  • DDR/DDR2/DDR3/LPDDR3 Memory Power Supplies
  • SSTL-2, SSTL-18, SSTL-15 and HSTL Termination

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

  • Synchronous Buck Controller (VDDQ)
    • Wide-Input Voltage Range: 3.0-V to 28-V
    • D−CAP™ Mode with 100-ns Load Step Response
    • Current Mode Option Supports Ceramic Output Capacitors
    • Supports Soft-Off in S4/S5 States
    • Current Sensing from RDS(on) or Resistor
    • 2.5-V (DDR), 1.8-V (DDR2), Adjustable to
      1.5-V (DDR3) or 1.2-V (LPDDR3) or
      Output Range 0.75-V to 3.0-V
    • Equipped with Powergood, Overvoltage Protection and
      Undervoltage Protection
  • 1-A LDO (VTT), Buffered Reference (VREF)
    • Capable to Sink and Source 1 A
    • LDO Input Available to Optimize Power Losses
    • Requires only 20-7micro;F Ceramic Output Capacitor
    • Buffered Low Noise 10-mA VREF Output
    • Accuracy ±20 mV for both VREF and VTT
    • Supports High-Z in S3 and Soft-Off in S4/S5
    • Thermal Shutdown

APPLICATONS

  • DDR/DDR2/DDR3/LPDDR3 Memory Power Supplies
  • SSTL-2, SSTL-18, SSTL-15 and HSTL Termination

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

The TPS51116 provides a complete power supply for DDR/SSTL-2, DDR2/SSTL-18, DDR3/SSTL-15, and LPDDR3 memory systems. It integrates a synchronous buck controller with a 1-A sink/source tracking linear regulator and buffered low noise reference. The TPS51116 offers the lowest total solution cost in systems where space is at a premium. The TPS51116 synchronous controller runs fixed 400-kHz, pseudo-constant frequency PWM with an adaptive on-time control that can be configured in D-CAP Mode for ease of use and fastest transient response or in current mode to support ceramic output capacitors. The 1-A sink/source LDO maintains fast transient response only requiring 20-μF (2 × 10 µF) of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The TPS51116 supports all of the sleep state controls placing VTT at high-Z in S3 (suspend to RAM) and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5 (suspend to disk). TPS51116 has all of the protection features including thermal shutdown and is offered in a 20-pin HTSSOP PowerPAD package.

The TPS51116 provides a complete power supply for DDR/SSTL-2, DDR2/SSTL-18, DDR3/SSTL-15, and LPDDR3 memory systems. It integrates a synchronous buck controller with a 1-A sink/source tracking linear regulator and buffered low noise reference. The TPS51116 offers the lowest total solution cost in systems where space is at a premium. The TPS51116 synchronous controller runs fixed 400-kHz, pseudo-constant frequency PWM with an adaptive on-time control that can be configured in D-CAP Mode for ease of use and fastest transient response or in current mode to support ceramic output capacitors. The 1-A sink/source LDO maintains fast transient response only requiring 20-μF (2 × 10 µF) of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The TPS51116 supports all of the sleep state controls placing VTT at high-Z in S3 (suspend to RAM) and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5 (suspend to disk). TPS51116 has all of the protection features including thermal shutdown and is offered in a 20-pin HTSSOP PowerPAD package.

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Documentación técnica

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Tipo Título Fecha
* Data sheet DDR SYNCHRONOUS BUCK CONTROLLER datasheet (Rev. A) 07 nov 2012
* VID TPS51116-EP VID V6212602 21 jun 2016
* Radiation & reliability report TPS51116MPWPEP Reliability Report 02 feb 2016

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPS51116EVM-001 — Solución de alimentación de memoria TPS51116, módulo de evaluación de controlador reductor síncrono

The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to (...)

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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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Soporte y capacitación

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