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ISO5451-Q1

現行

具有主動保護功能的車用 5.7kVrms、2.5A/5A 單通道絕緣式閘極驅動器

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產品規格表

ISO5451-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1420 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1420 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity (CMTI)
    at VCM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 10000-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 1420-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity (CMTI)
    at VCM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 10000-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 1420-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

The ISO5451-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.

The ISO5451-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.
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類型 標題 日期
* Data sheet ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. A) PDF | HTML 2016年 12月 22日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Certificate ISO5x5x CQC Certificate of Product Certification 2023年 11月 7日
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023年 9月 1日
Certificate ISO5451 CQC Certificate of Product Certification 2023年 8月 16日
Certificate TUV Certificate for Isolation Devices (Rev. K) 2022年 8月 5日
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 2022年 8月 5日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate CSA Certification (Rev. Q) 2021年 6月 14日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
EVM User's guide ISO5851 Evaluation Module User's Guide 2015年 6月 19日

設計與開發

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開發板

ISO5851EVM — ISO5851 評估模組 (EVM)

This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

使用指南: PDF
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模擬型號

ISO5451 PSPICE Unencrypted Model

SLLM448.ZIP (3 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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SOIC (DW) 16 Ultra Librarian
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