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LM5110

現行

具 4-V UVLO、專用輸入接地和關機輸入的 5-A/3-A 雙通道閘極驅動器

現在提供此產品的更新版本

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功能相同,但引腳輸出與所比較的裝置不同
UCC27624 現行 具 4V UVLO、30V VDD 和低傳播延遲的 5A/5A 雙通道閘極驅動器 Wide VDD and higher driver current

產品詳細資料

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 224 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DPR) 10 16 mm² 4 x 4
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

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類型 標題 日期
* Data sheet LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) PDF | HTML 2012年 11月 5日
Application note Why use a Gate Drive Transformer? PDF | HTML 2024年 3月 4日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 2024年 1月 22日
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021年 11月 10日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note Improving Efficiency of DC-DC Conversion through Layout 2019年 5月 7日
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 2018年 11月 26日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Selection guide Power Management Guide 2018 (Rev. R) 2018年 6月 25日
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
使用指南: PDF
TI.com 無法提供
模擬型號

LM5110-1M PSpice Transient Model (Rev. A)

SNVM295A.ZIP (57 KB) - PSpice Model
模擬型號

LM5110-1M TINA-TI Transient Reference Design

SNVM406.TSC (135 KB) - TINA-TI Reference Design
模擬型號

LM5110-1M TINA-TI Transient Spice Model

SNVM407.ZIP (10 KB) - TINA-TI Spice Model
模擬型號

LM5110-2M PSpice Transient Model

SNVM308.ZIP (47 KB) - PSpice Model
模擬型號

LM5110-2M TINA-TI Transient Reference Design

SNVM408.TSC (135 KB) - TINA-TI Reference Design
模擬型號

LM5110-2M TINA-TI Transient Spice Model

SNVM409.ZIP (10 KB) - TINA-TI Spice Model
模擬型號

LM5110-3M PSpice Transient Model

SNVM309.ZIP (47 KB) - PSpice Model
模擬型號

LM5110-3M TINA-TI Transient Reference Design

SNVM412.TSC (136 KB) - TINA-TI Reference Design
模擬型號

LM5110-3M TINA-TI Transient Spice Model

SNVM413.ZIP (10 KB) - TINA-TI Spice Model
模擬型號

LM5110_1M Unencrypted PSpice Transient Model

SNVMAD0.ZIP (1 KB) - PSpice Model
模擬型號

LM5110_2M Unencrypted PSpice Transient Model

SNVMAC9.ZIP (1 KB) - PSpice Model
模擬型號

LM5110_3M Unencrypted PSpice Transient Model

SNVMAD1.ZIP (1 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian
WSON (DPR) 10 Ultra Librarian

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