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LMG1025-Q1

現行

適用於窄脈衝應用、具有 5V UVLO 的車用 7A/5A 單通道低壓側閘極驅動器

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產品規格表

LMG1025-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
WSON (DEE) 6 4 mm² 2 x 2
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
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類型 標題 日期
* Data sheet LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications datasheet (Rev. C) PDF | HTML 2024年 12月 6日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 2023年 9月 8日
Application brief GaN Applications PDF | HTML 2022年 8月 10日
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022年 8月 10日
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022年 8月 4日
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022年 8月 4日
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022年 8月 2日
Functional safety information LMG1025-Q1 FIT, FMD, and Pin FMA PDF | HTML 2022年 6月 24日
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021年 11月 10日
Certificate LMG1025-Q1EVM EU Declaration of Conformity (DoC) (Rev. A) 2020年 9月 16日
EVM User's guide LMG1025-Q1 EVM User's Guide (Rev. B) 2020年 5月 8日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note GaN Gate Driver Layout Help 2019年 5月 23日
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
Application brief Enable Function with Unused Differential Input 2018年 7月 11日
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
White paper A comprehensive methodology to qualify the reliability of GaN products 2015年 3月 2日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
使用指南: PDF
TI.com 無法提供
開發板

LMG1025-Q1EVM — LMG1025-Q1 GaN 低側驅動器和 GaN FET LiDAR 評估模組

The LMG1025-Q1EVM is a small, easy-to-use power stage with integrated resistive load (laser not included). It takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage.
使用指南: PDF
TI.com 無法提供
模擬型號

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice Model
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模擬型號

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice Model
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計算工具

SLURB15 — LMG1025-Q1 Schematic Review Template

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低壓側驅動器
LMG1025-Q1 — 適用於窄脈衝應用、具有 5V UVLO 的車用 7A/5A 單通道低壓側閘極驅動器
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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參考設計

TIDA-01573 — 適用於 LiDAR 的納秒雷射驅動器參考設計

This light distancing and ranging (LiDAR) reference design showcases the LMG1020 and LMG1025-Q1 low side gate drivers for narrow pulse applications. These devices are capable of driving a FET to produce <1.5-ns laser optical pulses in excess of 100W.
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
WSON (DEE) 6 Ultra Librarian
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