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隔離式閘極驅動器

UCC21520-Q1

現行

具有雙輸入、停用功能、失效時間的車用 4-A、6-A、5.7-kVRMS 隔離式雙通道驅動器

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引腳對引腳且具備與所比較裝置相同的功能
最新 UCC21550-Q1 現行 具有 IGBT 專用 DIS 和 DT 針腳的車用 4A/6A、5-kVRMS 雙通道隔離式閘極驅動器 Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21520-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5, 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5, 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.
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類型 標題 日期
* Data sheet UCC21520-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver for Automotive datasheet (Rev. E) PDF | HTML 2024年 6月 17日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024年 1月 25日
Certificate UCC215xx CQC Certificate of Product Certification 2023年 8月 17日
Certificate UCC21520 CQC Certificate of Product Certification (Rev. A) 2023年 8月 16日
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 2022年 12月 2日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
EVM User's guide Using the UCC21520EVM-286, UCC21521CEVM-286, and UCC21530EVM286 User's Guide (Rev. C) PDF | HTML 2021年 10月 21日
More literature Protecting Power Devices in Electric Vehicle Applications 2021年 3月 23日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Certificate CSA Product Certificate (Rev. A) 2019年 8月 15日
User guide Gate Drive Voltage vs. Efficiency 2019年 4月 25日
White paper Driving the future of HEV/EV with high-voltage solutions (Rev. B) 2018年 5月 16日
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018年 3月 27日
White paper Cities grow smarter through innovative semiconductor technologies 2017年 7月 7日
White paper Charging stations: Toward an EV support infrastructure 2017年 5月 9日
Application note UCC21520, a Universal Isolated Gate Driver with Fast Dynamic Response (Rev. A) PDF | HTML 2016年 7月 5日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21520EVM-286 — UCC21520 4A/6A 隔離式雙通道閘極驅動器評估模組

UCC21520EVM-286 is designed for evaluating UCC21520DW, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current capability. This EVM could be served as a reference design for driving power MOSFETS, IGBTS, and SiC MOSFETS with UCC21520 pin function identification, (...)

使用指南: PDF | HTML
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模擬型號

UCC21520 PSpice Transient Model

SLUM544.ZIP (59 KB) - PSpice Model
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模擬型號

UCC21520 TINA-TI Reference Design

SLUM552.TSC (168 KB) - TINA-TI Reference Design
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模擬型號

UCC21520 TINA-TI Transient Spice Model

SLUM551.ZIP (23 KB) - TINA-TI Spice Model
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模擬型號

UCC21520 Unencrypted PSpice Transient Model

SLUM543.ZIP (3 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

TIDA-01604 — 適用於 HEV/EV 車載充電器的 98.6% 效率、6.6-kW 圖騰柱 PFC 參考設計

This reference design functions from a base of silicon carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V (...)
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DW) 16 Ultra Librarian
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