驅動程式或資料庫
UCC21520-Q1-DESIGN — UCC21520-Q1 design resources
FuSa supporting document
現在提供此產品的更新版本
引腳對引腳且具備與所比較裝置相同的功能
UCC21530-Q1
- AEC-Q100 qualified with:
- Device temperature grade 1
- Functional Safety Quality-Managed
- Universal: dual low-side, dual high-side or half-bridge driver
- Wide body SOIC-14 (DWK) package
- 3.3mm spacing between driver channels
- Switching parameters:
- 33ns typical propagation delay
- 20ns minimum pulse width
- 6ns maximum pulse-width distortion
- Common-mode transient immunity (CMTI) greater than 125V/ns
- 4A peak source, 6A peak sink output
- TTL and CMOS compatible inputs
- 3V to 18V input VCCI range
- Up to 25V VDD output drive supply
- 8V,12V and 17V VDD UVLO options
- Programmable overlap and dead time
- Junction temperature range –40 to +150°C
The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.
The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.
This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.
The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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檢視所有 10 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | UCC21530-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing datasheet (Rev. F) | PDF | HTML | 2024年 9月 17日 |
| White paper | 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) | PDF | HTML | 2024年 3月 7日 | |
| Certificate | VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) | 2024年 2月 29日 | ||
| Application note | Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) | PDF | HTML | 2024年 1月 25日 | |
| Certificate | UCC21540 CQC Certificate of Product Certification | 2023年 8月 17日 | ||
| Certificate | UCC215xx CQC Certificate of Product Certification | 2023年 8月 17日 | ||
| Certificate | UL Certification E181974 Vol 4. Sec 7 (Rev. C) | 2022年 12月 2日 | ||
| Application brief | The Use and Benefits of Ferrite Beads in Gate Drive Circuits | PDF | HTML | 2021年 12月 16日 | |
| Certificate | CSA Product Certificate (Rev. A) | 2019年 8月 15日 | ||
| Technical article | Searching for the newest innovations in power? Find them at APEC | PDF | HTML | 2019年 2月 9日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
開發板
UCC21530EVM-286 — UCC21530 隔離式雙通道驅動器評估模組
UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
驅動程式或資料庫
UCC21530-Q1-DESIGN — UCC21530-Q1 design resources
FS documents
支援產品和硬體
模擬工具
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計
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TIDM-02012 是一款高電壓、5kW 參考設計，專為 HEV/EV 壓縮機 (eCompressor) 應用而打造，由中階性能 C2000™ TMS320F28003x 即時 MCU 控制。其設計用於評估 400V 和 800V DC 匯流排，能涵蓋更高電池電壓的市場趨勢。基於 controlCARD 的設計讓使用者能夠評估多個 MCU 和閘極驅動器選項，並可視需求擴充以支援 C2000™ 產品組合中的其他裝置，包括未來發展藍圖中的裝置，以滿足日益增長的網路安全、功能安全和其他汽車市場需求。
MathWorks (...)
Design guide: PDF
參考設計
TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計
此參考設計展現如何以單一 TMS320F28388D 即時 C2000™ MCU 控制 HEV/EV 牽引變流器和雙向 DC-DC 轉換器。牽引控制運用軟體式解析器轉數位轉換器 (RDC) 將馬達驅動至高達 20,000 RPM 的高速。DC-DC 轉換器則採用尖峰電流模式控制 (PCMC) 技術，以及全橋相移式轉換器 (PSFB) 拓撲與同步整流 (SR) 機制。牽引變流器級使用由 UCC5870-Q1 智慧閘極驅動器驅動的碳化矽 (SiC) 功率級。PCMC 波形是使用最先進的 PWM 模組和比較器子系統 (CMPSS)中的內建傾斜補償產生。ASIL (...)
參考設計
TIDA-01605 — 具有二級關閉保護功能的車用雙通道 SiC MOSFET 閘極驅動器參考設計
This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
參考設計
TIDM-02002 — 適用於 HEV/EV 車載充電器的雙向 CLLLC 共振雙主動橋式 (DAB) 參考設計
CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
參考設計
PMP21999 — 使用 PCB 繞組變壓器的 6.6 kW、雙向 CLLLC 共振轉換器參考設計
This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
參考設計
PMP21561 — 安全隔離次級 SiC MOSFET 驅動器參考設計
This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
參考設計
PMP21553 — 安全隔離主要 SiC MOSFET 驅動器參考設計
This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DWK) | 14 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。