UCC21530-Q1

現行

Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

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UCC21551-Q1 現行 車用 4A/6A 5kVRMS 雙通道隔離式閘極驅動器,具備 IGBT 與 SiC 適用的 EN 與 DT 針腳 Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

產品詳細資料

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

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類型 標題 日期
* Data sheet UCC21530-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing datasheet (Rev. F) PDF | HTML 2024年 9月 17日
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) PDF | HTML 2024年 3月 7日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024年 1月 25日
Certificate UCC21540 CQC Certificate of Product Certification 2023年 8月 17日
Certificate UCC215xx CQC Certificate of Product Certification 2023年 8月 17日
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 2022年 12月 2日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate CSA Product Certificate (Rev. A) 2019年 8月 15日
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 2019年 2月 9日

設計與開發

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開發板

UCC21530EVM-286 — UCC21530 隔離式雙通道驅動器評估模組

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
使用指南: PDF | HTML
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驅動程式或資料庫

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UCC21530-Q1-DESIGN UCC21530-Q1 design resources

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產品
隔離式閘極驅動器
UCC21530-Q1 Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC
模擬型號

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

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Design guide: PDF
參考設計

TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計

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Design guide: PDF
電路圖: PDF
參考設計

TIDA-01605 — 具有二級關閉保護功能的車用雙通道 SiC MOSFET 閘極驅動器參考設計

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02002 — 適用於 HEV/EV 車載充電器的雙向 CLLLC 共振雙主動橋式 (DAB) 參考設計

CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
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電路圖: PDF
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Test report: PDF
電路圖: PDF
參考設計

PMP21561 — 安全隔離次級 SiC MOSFET 驅動器參考設計

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
電路圖: PDF
參考設計

PMP21553 — 安全隔離主要 SiC MOSFET 驅動器參考設計

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
電路圖: PDF
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SOIC (DWK) 14 Ultra Librarian

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