適用於 IGBT/SiC 且具 DESAT 和內部鉗位的車用 3.0kVrms、± 10A、單通道絕緣式閘極驅動器 Basic isolation, internal Miller clamp, DESAT protection, has no active short circuit or integrated analog-to-PWM sensor

UCC21736-Q1

停產

產品規格表

立即訂購

產品詳細資料

Number of channels

1

Isolation rating

Reinforced

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

2121

Transient isolation voltage (VIOTM) (VPK)

8000, 8400

Power switch

IGBT, SiCFET

Peak output current (A)

10

Features

Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output

Output VCC/VDD (max) (V)

33

Output VCC/VDD (min) (V)

13

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.09

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

28

Fall time (ns)

24

Undervoltage lockout (typ) (V)

12

Number of channels

1

Isolation rating

Reinforced

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

2121

Transient isolation voltage (VIOTM) (VPK)

8000, 8400

Power switch

IGBT, SiCFET

Peak output current (A)

10

Features

Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output

Output VCC/VDD (max) (V)

33

Output VCC/VDD (min) (V)

13

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.09

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

28

Fall time (ns)

24

Undervoltage lockout (typ) (V)

12

SOIC (DW)

16

106.09 mm² 10.3 x 10.3

5.7-kV_RMS single channel isolated gate driver
AEC-Q100 qualified for automotive applications
SiC MOSFETs and IGBTs up to 2121 V_pk
33-V maximum output drive voltage (VDD-VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
270-ns response time fast overcurrent protection
External active miller clamp
900-mA soft turn-off when fault happens
ASC input on isolated side to turn on power switch during system fault
Alarm FLT on over current and reset from RST/EN
Fast enable/disable response on RST/EN
Reject <40-ns noise transient and pulse on input pins
12V VDD UVLO and -3V VEE UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8 mm
Operating junction temperature –40°C to 150°C

5.7-kV_RMS single channel isolated gate driver
AEC-Q100 qualified for automotive applications
SiC MOSFETs and IGBTs up to 2121 V_pk
33-V maximum output drive voltage (VDD-VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
270-ns response time fast overcurrent protection
External active miller clamp
900-mA soft turn-off when fault happens
ASC input on isolated side to turn on power switch during system fault
Alarm FLT on over current and reset from RST/EN
Fast enable/disable response on RST/EN
Reject <40-ns noise transient and pulse on input pins
12V VDD UVLO and -3V VEE UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8 mm
Operating junction temperature –40°C to 150°C

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5-kV_RMS working voltage, 12.8-kV_PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5-kV_RMS working voltage, 12.8-kV_PK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

filter

尋找其它隔離式閘極驅動器

下載

技術文件

star

=TI 所選的此產品重要文件

找不到結果。請清除您的搜尋條件，然後再試一次。

檢視所有 1

	類型	標題		日期
*	Data sheet	UCC21736-Q1 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. A)	PDF \| HTML	2020年 5月 6日

UCC21736-Q1

適用於 IGBT/SiC 且具主動短路保護功能的車用 5.7kVrms、±10A 絕緣式單通道閘極驅動器

可直接投入的替代產品，相較於所比較的裝置，具備升級功能

功能相同，但引腳輸出與所比較的裝置不同

UCC21736-Q1

產品詳細資料

技術文件

訂購與品質