Gehäuseinformationen
| Gehäuse | Pins WSON (DPR) | 10 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 4.500 | LARGE T&R |
Merkmale von LM5102
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Independently Programmable High and Low Side Rising Edge Delay
- Bootstrap Supply Voltage Range up to 118 V dc
- Fast Turn-Off Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads with 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Timer Can Be Terminated Midway Through Sequence
Beschreibung von LM5102
The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.
For all available packages, see the orderable addendum at the end of the data sheet.