TPS28225

Name: TPS28225
Brand: TI
SKU: TPS28225
Price: 0.554 USD

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Halbbrücken-Gate-Treiber, 4 A, 27 V mit 4 V UVLO für synchrone Gleichrichtung

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Datenblatt

document-pdfAcrobat TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E) (Englisch) PDF | HTML

TPS28225

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Datenblatt

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Produktdetails

Bootstrap supply voltage (max) (V)

24

Power switch

MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

8

Peak output current (A)

6

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

3.5

Rating

Catalog

Propagation delay time (µs)

0.014

Rise time (ns)

10

Fall time (ns)

5

Iq (mA)

0.35

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

0

Features

Synchronous Rectification

Driver configuration

Single

Bootstrap supply voltage (max) (V)

24

Power switch

MOSFET

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

8

Peak output current (A)

6

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

3.5

Rating

Catalog

Propagation delay time (µs)

0.014

Rise time (ns)

10

Fall time (ns)

5

Iq (mA)

0.35

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

0

Features

Synchronous Rectification

Driver configuration

Single

SOIC (D)

8

29.4 mm² 4.9 x 6

VSON (DRB)

8

9 mm² 3 x 3

Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
Wide Power System Train Input Voltage: 3V Up to 27V
Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
Capable to Drive MOSFETs with ≥40A Current per Phase
High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
Capable to Propagate <30ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
High Performance Replacement for Popular 3-State Input Drivers

Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
Wide Power System Train Input Voltage: 3V Up to 27V
Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
Capable to Drive MOSFETs with ≥40A Current per Phase
High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
Capable to Propagate <30ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
High Performance Replacement for Popular 3-State Input Drivers

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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Alle anzeigen 6

	Typ	Titel		Datum
*	Data sheet	TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E)	PDF \| HTML	19 Jan 2024
	Application brief	External Gate Resistor Selection Guide (Rev. A)		28 Feb 2020
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		28 Feb 2020
	More literature	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)		29 Okt 2018
	Selection guide	Power Management Guide 2018 (Rev. R)		25 Jun 2018
	More literature	Power Loss Calculation for Sync Buck Converter		14 Feb 2007

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Gehäuse	Pins	CAD-Symbole, Footprints und 3D-Modelle
SOIC (D)	8	Ultra Librarian
VSON (DRB)	8	Ultra Librarian

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TPS28225

Halbbrücken-Gate-Treiber, 4 A, 27 V mit 4 V UVLO für synchrone Gleichrichtung

TPS28225

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TPS28225 PSpice Transient Model

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