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TPS28225

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Halbbrücken-Gate-Treiber, 4 A, 27 V mit 4 V UVLO für synchrone Gleichrichtung

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TPS28225

AKTIV
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Produktdetails

Bootstrap supply voltage (max) (V) 24 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Peak output current (A) 6 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 24 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Peak output current (A) 6 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features Synchronous Rectification Driver configuration Single
SOIC (D) 8 29.4 mm² 4.9 x 6 VSON (DRB) 8 9 mm² 3 x 3
  • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
  • Wide Power System Train Input Voltage: 3V Up to 27V
  • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
  • Capable to Drive MOSFETs with ≥40A Current per Phase
  • High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
  • Capable to Propagate <30ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
  • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
  • Wide Power System Train Input Voltage: 3V Up to 27V
  • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
  • Capable to Drive MOSFETs with ≥40A Current per Phase
  • High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
  • Capable to Propagate <30ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E) PDF | HTML 19 Jan 2024
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 Mär 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
More literature Power Loss Calculation for Sync Buck Converter 14 Feb 2007

Design und Entwicklung

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Simulationsmodell

TPS28225 PSpice Transient Model

SLUM287.ZIP (36 KB) - PSpice Model
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Simulationsmodell

TPS28225 TINA-TI Transient Reference Design

SLUM289.TSC (83 KB) - TINA-TI Reference Design
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Simulationsmodell

TPS28225 TINA-TI Transient Spice Model

SLUM290.ZIP (29 KB) - TINA-TI Spice Model
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Simulationsmodell

TPS28225 Unencrypted PSpice Transient Model

SLUM496.ZIP (3 KB) - PSpice Model
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