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UCC20225-Q1

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Isolierter Doppelkanal-Gate-Treiber, 2,5 kVrms, 4 A/6 A, mit einfachem PWM-Eingang & 8 V UVLO, im LG

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UCC20225-Q1

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Produktdetails

Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2500 Working isolation voltage (VIOWM) (Vrms) 792 Transient isolation voltage (VIOTM) (VPK) 3535 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 792 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8
Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2500 Working isolation voltage (VIOWM) (Vrms) 792 Transient isolation voltage (VIOTM) (VPK) 3535 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 792 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8
VLGA (NPL) 13 25 mm² 5 x 5
  • AEC Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Single PWM input, dual output
  • Resistor-programmable dead time
  • 4-A peak source, 6-A peak sink output
  • CMTI greater than 100-V/ns
  • Switching parameters:
    • 19-ns typical propagation delay
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD with 5V and 8-V UVLO Options
  • Rejects input transients shorter than 5-ns
  • TTL and CMOS compatible inputs
  • 5-mm x 5-mm space-saving LGA-13 Package
  • Safety-related certifications:
    • 3535-VPK isolation per VDE V 0884-11:2017
    • 2500-VRMS isolation for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2011
  • AEC Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Single PWM input, dual output
  • Resistor-programmable dead time
  • 4-A peak source, 6-A peak sink output
  • CMTI greater than 100-V/ns
  • Switching parameters:
    • 19-ns typical propagation delay
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD with 5V and 8-V UVLO Options
  • Rejects input transients shorter than 5-ns
  • TTL and CMOS compatible inputs
  • 5-mm x 5-mm space-saving LGA-13 Package
  • Safety-related certifications:
    • 3535-VPK isolation per VDE V 0884-11:2017
    • 2500-VRMS isolation for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2011

The UCC20225-Q1 family are single-input, dual-output isolated gate drivers with 4-A source and 6-A sink peak current in 5-mm x 5-mm LGA-13. It is designed to drive power transistors up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 2.5-kVRMS isolation barrier, with minimum 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two output-side drivers allows working voltage up to 700-VDC.

The UCC20225-Q1 family allow programmable dead time through a resistor on DT pin. A DIS pin shuts down both outputs simultaneously when set high, and allows normal operation when left grounded.

The device accepts VDD supply voltages up to 25-V. A wide VCCI range from 3-V to 18-V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC20225-Q1 family enables high power density, high efficiency, and robustness in a variety of automotive applications.

The UCC20225-Q1 family are single-input, dual-output isolated gate drivers with 4-A source and 6-A sink peak current in 5-mm x 5-mm LGA-13. It is designed to drive power transistors up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 2.5-kVRMS isolation barrier, with minimum 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two output-side drivers allows working voltage up to 700-VDC.

The UCC20225-Q1 family allow programmable dead time through a resistor on DT pin. A DIS pin shuts down both outputs simultaneously when set high, and allows normal operation when left grounded.

The device accepts VDD supply voltages up to 25-V. A wide VCCI range from 3-V to 18-V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC20225-Q1 family enables high power density, high efficiency, and robustness in a variety of automotive applications.

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Typ Titel Datum
* Data sheet UCC20225-Q1, UCC20225A-Q1 Isolated Dual-Channel Gate Driver with Single Input in LGA for Automotive 48-V Systems datasheet (Rev. C) PDF | HTML 19 Sep 2019
Certificate VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. W) 31 Jan 2024
White paper Understanding failure modes in isolators (Rev. B) PDF | HTML 29 Jan 2024
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dez 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Technical article Evolution of 48V starter-generator systems PDF | HTML 23 Sep 2019
Certificate UL Certification E181974 Vol 4. Sec 8 (Rev. A) 23 Jul 2018
White paper Driving the future of HEV/EV with high-voltage solutions (Rev. B) 16 Mai 2018
Certificate CQC Product Certificate 2 07 Feb 2018
White paper Cities grow smarter through innovative semiconductor technologies 07 Jul 2017

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