Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 16 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von UCC21220
- Universal: dual low-side, dual high-side or half-bridge driver
- Supports basic and functional isolation
- CMTI greater than 125V/ns
- Up to 4A peak source, 6A peak sink output
- Switching
parameters:
- 33ns typical propagation delay
- 5ns maximum pulse-width distortion
- 10µs maximum VDD power-up delay
- Up to
25V
VDD output drive supply
- 5V and 8V VDD UVLO Options
- Junction temperature range (Tj) –40°C to 150°C
- Narrow body SOIC-16 (D) package
- TTL and CMOS compatible inputs
- Safety-related certifications:
- 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)
- 3000VRMS isolation for 1 minute per UL 1577 (planned)
- CQC certification per GB4943.1-2022 (planned)
Beschreibung von UCC21220
The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.
Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.
With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.