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UCC21231

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Isolierter Hochgeschwindigkeits-Zweikanal-Gate-Treiber mit 4 A Quellen und 6 A Senken

Produktdetails

Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 1600 Transient isolation voltage (VIOTM) (VPK) 2263 TI functional safety category Functional Safety-Capable Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 1600 Transient isolation voltage (VIOTM) (VPK) 2263 TI functional safety category Functional Safety-Capable Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
WSON (DLG) 13 16 mm² 4 x 4
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC21231 4A Source, 6A Sink, High-Speed, Dual-Channel Isolated Gate Driver in Low-Profile SON Package datasheet (Rev. A) PDF | HTML 11 Jun 2024
EVM User's guide UCC21231AEVM-108 Evaluation Module User's Guide (Rev. A) PDF | HTML 23 Mai 2024

Design und Entwicklung

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