Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -40 to 140 |
| Gehäusemenge | Träger 75 | TUBE |
Merkmale von UCC27200A
- Drives two N-channel MOSFETs in high-side and low-side configuration
- Negative voltage handling on HS (–18V)
- Maximum boot voltage 120V
- Maximum VDD voltage 20V
- On-chip 0.65V VF, 0.65Ω RD bootstrap diode
- 22ns propagation delay times
- 3A sink, 3A source output currents
- 8ns rise/7ns fall time with 1000pF load
- 1ns delay matching
- Undervoltage lockout for high-side and low-side driver
- Specified from –40°C to 150°C
Beschreibung von UCC27200A
The UCC2720xA family of high-frequency N-channel MOSFET drivers include a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC2720xA has an enhanced ESD input structure and also has the ability to withstand a maximum of –18V on its HS pin.
An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720xA are offered. The UCC27200A has high-noise immune CMOS input thresholds while the UCC27201A has TTL-compatible thresholds.