Inicio Gestión de la energía Controladores CA/CC y CC/CC (FET externo)
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Gestión de la energía
Controladores CA/CC y CC/CC (FET externo)

TPS53632G

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Controlador D-CAP+ de medio puente para convertidor CC/CC GAN de 48 V

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TPS53632G

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Detalles del producto

Vin (max) (V) 3.6 Operating temperature range (°C) -10 to 105 Control mode Current Topology Multiphase Rating Catalog Features Light-load efficiency Duty cycle (max) (%) 50
Vin (max) (V) 3.6 Operating temperature range (°C) -10 to 105 Control mode Current Topology Multiphase Rating Catalog Features Light-load efficiency Duty cycle (max) (%) 50
VQFN (RSM) 32 16 mm² 4 x 4
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.
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Documentación técnica

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* Data sheet TPS53632G D-CAP+™ Half-Bridge PWM Controller Optimized for GaN-based 48-V DC/DC Converter with I2C Interface datasheet (Rev. A) PDF | HTML 10 jun 2016
EVM User's guide Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 02 ago 2017
Technical article Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 05 jul 2016
Technical article Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 28 mar 2016

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMG5200POLEVM-10 — Módulo de evaluación LMG5200 de punto de carga GaN de 48 V a 1 V

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48V to 1V application.  This EVM implements the 48V-1V converter as a single-stage hard-switched half-bridge with current-doubler rectifier.  The EVM (...)

Guía del usuario: PDF
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Lista de materiales (BOM)

PMP4497 BOM

TIDRNB1.PDF (67 KB)
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Esquema

PMP4497 Schematic

TIDRNB0.PDF (519 KB)
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Diseños de referencia

PMP22089 — Diseño de referencia de convertidor de punto de carga de medio puente con tecnología GaN

This reference design modifies the inboard transformer turns ratio from 5:1 to 3:1 to reduce input the range. The board supports input voltages from 24 V to 32 V and output voltages between 0.5 V to 1.0 V with output currents up to 40 A. This topology efficiently supports the high step-down ratio (...)
Test report: PDF
Esquema: PDF
Diseños de referencia

PMP4497 — Diseño de referencia LMG5200 de convertidor de 48 V a 1 V/40 A de una etapa

The PMP4497 is a GaN-based reference design solution for the Vcore such as FPGA, ASIC applications. With high integration and low switching loss, the GaN module LMG5200 enables a high efficiency single stage from 48V to 1.0V solution to replace the traditional 2-stage solution. This design shows (...)
Test report: PDF
Esquema: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
VQFN (RSM) 32 Ultra Librarian
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Pedidos y calidad

Información incluida:
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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
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