TPS7H5020-SEP

PRESENTACIÓN PRELIMINAR

Controlador PWM de 1 MHz con tolerancia a la radiación capaz de controlar MOSFET o FET de GaN

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Detalles del producto

Vin (max) (V) 14 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Flybuck, Forward Rating Space Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Vin (max) (V) 14 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Flybuck, Forward Rating Space Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) in order to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) in order to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

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Documentación técnica

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* Data sheet TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet PDF | HTML 06 mar 2025
* Radiation & reliability report TPS7H5020-SEP Total Ionizing Dose (TID) Preliminary Report 04 mar 2025
EVM User's guide TPS7H5020-SP Evaluation Module PDF | HTML 07 mar 2025
Selection guide TI Space Products (Rev. J) 12 feb 2024
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15 sep 2022
E-book Radiation Handbook for Electronics (Rev. A) 21 may 2019

Diseño y desarrollo

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Placa de evaluación

TPS7H5020EVM — TPS7H5020-SP evaluation module

The TPS7H5020EVM demonstrates the operation of a single TPS7H5020-SP current-mode PWM controller with integrated gate driver with a GaN FET in a boost configuration. The board provides footprints that can be populated with additional components and test points to allow for testing of customized (...)
Guía del usuario: PDF | HTML
Diseños de referencia

PMP23546 — 2.4W multi-output PSR flyback reference design for bias supplies

This reference design uses TPS7H5020-SEP as a primary-side regulated (PSR) flyback converter. The input accepts a 22V to 36V range to generate a 12V bias referenced to primary ground and another 12V output that can be referenced to another return. This reference design can be used to provide bias (...)
Test report: PDF
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HTSSOP (PWP) 24 Ultra Librarian

Pedidos y calidad

Información incluida:
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  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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