首頁 電源管理 閘極驅動器 半橋式驅動器

TPS7H6023-SP

現行

抗輻射、QMLV 22V 半橋 GaN 閘極驅動器

alarm通知 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 22 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 22 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
CFP (HBX) 48 468.72 mm² 16.74 x 28
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 13
類型 標題 日期
* Data sheet TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML 2024年 4月 17日
* Radiation & reliability report TPS7H60X3-SP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) PDF | HTML 2024年 8月 13日
* Radiation & reliability report TPS7H6023-SP Total Ionizing Dose (TID) Radiation Report 2024年 7月 1日
* Radiation & reliability report TPS7H6003-SP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML 2024年 6月 17日
* SMD TPS7H6023-SP SMD 5962-22201 2024年 4月 30日
Application brief DLA Approved Optimizations for QML Products (Rev. B) PDF | HTML 2024年 10月 23日
Selection guide TI Space Products (Rev. J) 2024年 2月 12日
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023年 8月 31日
Application note QML flow, its importance, and obtaining lot information (Rev. C) 2023年 8月 30日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022年 11月 17日
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020年 8月 21日
Application note Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form PDF | HTML 2020年 5月 18日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H6023EVM-CVAL — TPS7H6023-SP 評估模組

TPS7H6023EVM-CVAL 使用指南提供全方位的說明,以操作 TPS7H6023-SP 評估模組。此板最高可接受 14V 輸入,並允許設計師透過驅動氮化鎵 (GaN) FET 來測試 TPS7H6023-SP 的可靠性。預設情況下,評估模組設定為以 TPS7H6023-SP 的 PWM 模式運作,該模式接受一個切換訊號的輸入,並在內部產生互補訊號。
使用指南: PDF | HTML
開發板

ALPHA-3P-ADM-VA601-SPACE-AMD — Alpha Data ADM-VA601 套件,使用 AMD Versal 核心 XQRVC1902 ACAP 和 TI 耐輻射產品

外型尺寸採用 6U VPX,強調 AMD-Xilinx® Versal AI Core XQRVC1902 適應性 SoC/FPGA。ADM-VA600 為模組化機板設計,配備一個 FMC+ 連接器、DDR4 DRAM 及系統監控。零組件多數為耐輻射電源管理、介面、時脈與嵌入式處理裝置。

模擬型號

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice Model
模擬型號

TPS7H60x3/TPS7H60x5 SIMPLIS Model

SNOM811.ZIP (22 KB) - SIMPLIS Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

TIDA-010958 — Radiation-hardened dual-phase Versal® FPGA power reference design

The TIDA-010958 is a radiation-hardened synchronous buck power reference design intended for the AMD® Versal® AI Core XQRVC1902 core rail. The design is for a 12V input operation to generate a 0.8V output voltage and maximum 80A output current. This compact power design delivers high current while (...)
Design guide: PDF
參考設計

PMP23389 — 航太級 12V 至 5V 15A 同步降壓轉換器參考設計

此參考設計使用 TPS7H5002-SP PWM 控制器以控制同步降壓,使額定 12V 輸入成為 5.1V 的固定輸出,且負載最高 15A。TPS7H6023-SP 驅動 GaN FET,可在航太型應用中提供可靠設計。會直接感測輸出電流,以因應遙測與過電流保護。此設計可在 750kHz 時進行切換,並以低於 30mV 的輸出漣波實現超過 93% 的效率。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
CFP (HBX) 48 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片